Datasheet > MTE65N20H8

MTE65N20H8

更新时间： 2022-02-26 13:34:44

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
9页	706K
描述
N-Channel Enhancement Mode Power MOSFET

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数据手册

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MTE65N20H8 数据手册

Spec. No. : C872H8

Issued Date : 2016.02.01

Revised Date : 2016.04.01

Page No. : 1/9

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET

BVDSS

200V

24A

MTE65N20H8

ID @VGS=10V, TC=25°C

61mΩ

RDSON(TYP)

VGS=10V, ID=11A

Features

 Single Drive Requirement

 Low On-resistance

 Fast Switching Characteristic

 Repetitive Avalanche Rated

 Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTE65N20H8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

DFN 5 ×6

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / tape & reel

MTE65N20H8-0-T6-G

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTE65N20H8

CYStek Product Specification

12 3 4 5 6 7...9

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