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MTD3302 PDF预览

MTD3302

更新时间： 2024-11-08 22:45:51
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体小信号场效应晶体管开关
页数 文件大小 规格书
4页 91K
描述
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm

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中文翻译

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MTD3302 技术参数

生命周期：Transferred包装说明：SMALL OUTLINE, R-PSSO-G2
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.19
Is Samacsys：N其他特性：LOGIC LEVEL COMPATIBLE
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：8.3 A
最大漏源导通电阻：0.01 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e0
元件数量：1端子数量：2
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MTD3302 数据手册

 浏览型号MTD3302的Datasheet PDF文件第2页浏览型号MTD3302的Datasheet PDF文件第3页浏览型号MTD3302的Datasheet PDF文件第4页 
Order this document  
by MTD3302/D  
SEMICONDUCTOR TECHNICAL DATA  
Power Surface Mount Products  
SINGLE TMOS  
POWER MOSFET  
30 VOLTS  
R
= 10 m  
WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s  
latest MOSFET technology process to achieve the lowest possible on–resistance per silicon  
area. They are capable of withstanding high energy in the avalanche and commutation  
modes and the drain–to–source diode has a very low reverse recovery time. WaveFET  
devices are designed for use in low voltage, high speed switching applications where power  
efficiency is important. Typical applications are dc–dc converters, and power management  
in portable and battery powered products such as computers, printers, cellular and cordless  
phones. They can also be used for low voltage motor controls in mass storage products  
such as disk drives and tape drives. The avalanche energy is specified to eliminate the  
guesswork in designs where inductive loads are switched and offer additional safety margin  
against unexpected voltage transients.  
DS(on)  
CASE 369A–13, Style 2  
DPAK  
•
•
Characterized Over a Wide Range of Power Ratings  
Ultralow R Provides Higher Efficiency and  
D
DS(on)  
Extends Battery Life in Portable Applications  
Logic Level Gate Drive — Can Be Driven by  
Logic ICs  
•
•
•
•
•
•
Diode Is Characterized for Use In Bridge Circuits  
Diode Exhibits High Speed, With Soft Recovery  
G
I
Specified at Elevated Temperature  
DSS  
Avalanche Energy Specified  
Industry Standard DPAK Surface Mount Package  
S
MAXIMUM RATINGS (T = 25°C unless otherwise specified)  
J
Parameter  
Drain–to–Source Voltage  
Symbol  
Value  
30  
Unit  
V
DSS  
Vdc  
Vdc  
Vdc  
°C  
Drain–to–Gate Voltage  
V
DGR  
30  
Gate–to–Source Voltage  
V
±20  
GS  
T , T  
Operating and Storage Temperature Range  
–55 to 150  
J
stg  
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 25 Vdc, V  
= 10 Vdc, L = 126 mH, I  
= 3.0 A, V = 30 Vdc)  
DS  
500  
GS  
L(pk)  
DEVICE MARKING  
ORDERING INFORMATION  
Device  
Reel Size  
Tape Width  
12 mm embossed tape  
Quantity  
2500  
D3302  
MTD3302T4  
13″  
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.  
HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Motorola, Inc. 1997  
1234

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