Datasheet > MTC3504BJ4

MTC3504BJ4

更新时间： 2024-11-05 05:50:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
11页	313K
描述
N & P-Channel Enhancement Mode Power MOSFET

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中文翻译

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数据手册

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MTC3504BJ4 数据手册

Spec. No. : C449J4

Issued Date : 2009.03.11

Revised Date :

CYStech Electronics Corp.

Page No. : 1/11

N & P-Channel Enhancement Mode Power MOSFET

N-CH

P-CH

-40V

-9A

MTC3504BJ4

BVDSS

40V

12A

35mΩ

44mΩ

RDSON(MAX)

Features

• Low Gate Charge

• Simple Drive Requirement

• RoHS compliant & Halogen-free package

Equivalent Circuit

Outline

MTC3504BJ4

TO-252-4L

G：Gate D：Drain

S：Source

Absolute Maximum Ratings (TC=25°C, unless otherwise noted)

Limits

N-channel P-channel

Parameter

Symbol

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current @ TC=25°C

Continuous Drain Current @ TC=100°C

Pulsed Drain Current *1

VDS

VGS

IDM

±20

-40

±20

-9

-6

-36

Total Power Dissipation (TC=25℃)

Total Power Dissipation (TC=100℃)

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+175

°C

Note : *1 Pulse width limited by maximum junction temperature

*2. Duty cycle ≤ 1%

MTC3504BJ4

CYStek Product Specification

12 3 4 5 6 7...11

中文翻译

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