Datasheet > MT58L64V32FF-10

MT58L64V32FF-10

更新时间： 2024-11-08 04:37:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟静态存储器内存集成电路
页数	文件大小	规格书
25页	484K
描述
Standard SRAM, 64KX32, 10ns, CMOS, PBGA165, FBGA-165

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中文翻译

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数据手册

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MT58L64V32FF-10 数据手册

2Mb : 128K x 18, 64K x 32/36

FLOW-THROUGH SYNCBURST SRAM

2Mb SYNCBURST^™

SRAM

MT58L128L18F, MT58L64L32F,

MT58L64L36F; MT58L128V18F,

MT58L64V32F, MT58L64V36F

3.3V VDD, 3.3V o r 2.5V I/O, Flo w -Th ro u g h

FEATURES

100-Pin TQFP*

• Fast clock and OE# access times

• Single +3.3V +0.3V/-0.165V power supply (V^DD)

• Separate +3.3V or +2.5V isolated output buffer

supply (VDDQ)

• SNOOZE MODE for reduced-power standby

• Common data inputs and data outputs

• Individual BYTE WRITE control and GLOBAL

WRITE

• Three chip enables for simple depth expansion and

address pipelining

• Clock-controlled and registered addresses, data

I/Os and control signals

• Internally self-timed WRITE cycle

• Burst control pin (interleaved or linear burst)

• Automatic power-down

• 100-pin TQFP package

• 165-pin FBGA package

165-Pin FBGA

(Preliminary Package Data)

• Low capacitive bus loading

• x18, x32, and x36 versions available

OPTIONS

MARKING

• Timing (Access/Cycle/MHz)

6.8ns/8.0ns/125 MHz

7.5ns/8.8ns/113 MHz

8.5ns/10ns/100 MHz

10ns/15ns/66 MHz

-6.8

-7.5

-8.5

-10

• Configurations

3.3V I/O

128K x 18

64K x 32

64K x 36

MT58L128L18F

MT58L64L32F

MT58L64L36F

*JEDEC-standard MS-026 BHA (LQFP).

2.5V I/O

128K x 18

64K x 32

64K x 36

MT58L128V18F

MT58L64V32F

MT58L64V36F

GENERAL DESCRIPTION

• Packages

The Micron^®SyncBurst^™SRAM family employs

high-speed, low-power CMOS designs that are fabri-

cated using an advanced CMOS process.

100-pin TQFP

165-pin FBGA

Micron’s 2Mb SyncBurst SRAMs integrate a 128K x

18, 64K x 32, or 64K x 36 SRAM core with advanced

synchronous peripheral circuitry and a 2-bit burst

counter. All synchronous inputs pass through registers

controlled by a positive-edge-triggered single clock

input (CLK). The synchronous inputs include all ad-

dresses, all data inputs, active LOW chip enable (CE#),

• Operating Temperature Range

Commercial (0°C to +70°C)

None

Part Number Example:

MT58L64L36FT-8.5*

*See page 24 for the FBGA Part Marking Guide

2Mb: 128K x 18, 64K x 32/36 Flow-Through SyncBurst SRAM

MT58L128L18F_2.p65 – Rev. 8/00

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...25

中文翻译

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与MT58L64V32FF-10相关器件

型号	品牌	获取价格	描述	数据表
MT58L64V32FF-6.8	CYPRESS	获取价格	Standard SRAM, 64KX32, 6.8ns, CMOS, PBGA165, FBGA-165
MT58L64V32FF8.5	CYPRESS	获取价格	64KX32 STANDARD SRAM, 8.5ns, PBGA165, FBGA-165
MT58L64V32FT-10	MICRON	获取价格	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64V32FT-10IT	CYPRESS	获取价格	Standard SRAM, 64KX32, 10ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L64V32FT-10T	CYPRESS	获取价格	Cache SRAM, 64KX32, 10ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L64V32FT-6.8	MICRON	获取价格	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64V32FT-6.8IT	CYPRESS	获取价格	Cache SRAM, 64KX32, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100
MT58L64V32FT-6.8T	CYPRESS	获取价格	Cache SRAM, 64KX32, 6.8ns, CMOS, PQFP100, PLASTIC, MS-026, TQFP-100
MT58L64V32FT-7.5	MICRON	获取价格	2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM
MT58L64V32FT-7.5IT	CYPRESS	获取价格	Cache SRAM, 64KX32, 7.5ns, CMOS, PQFP100, PLASTIC, MS-026BHA, TQFP-100

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