Datasheet > MT4S24U(TE85L,F)

MT4S24U(TE85L,F)

更新时间： 2024-11-27 14:53:59

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	167K
描述
TRANSISTOR,BJT,NPN,5V V(BR)CEO,50MA I(C),TSOP

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中文翻译

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技术参数
数据手册

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MT4S24U(TE85L,F) 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.61	最大集电极电流 (IC)：	0.05 A
配置：	Single	最小直流电流增益 (hFE)：	70
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.175 W	子类别：	Other Transistors
表面贴装：	YES	标称过渡频率 (fT)：	12500 MHz
Base Number Matches：	1

MT4S24U(TE85L,F) 数据手册

MT4S24U

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT4S24U

Unit: mm

VHF~UHF Band Low Noise Amplifier Applications

•

Low Noise Figure: NF = 1.55dB(Typ.) (@f = 2GHz)

High Gain: |S21e|²= 11.5dB(Typ.) (@f = 2 GHz)

Absolute Maximum Ratings (Ta = 25°C)

1.Emitter1(E1)

2.Collector(C)

3.Emitter2(E2)

4.Base(B)

Characteristic

Collector-base voltage

Symbol

Unit

Rating

USQ

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

JEDEC

JEITA

―

°C

TOSHIBA

2-2K1A

Base current

Weight: 6 mg (typ.)

Collector power dissipation

Junction temperature

Storage temperature range

C(Note.1)

175

150

Tstg

−55 to 150

Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t))

Note.2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Marking

Type Name

R 8

2010-08-18

12 3 4 5

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