MT4S32U

更新时间： 2024-11-26 21:55:39

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
8页	164K
描述
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MT4S32U 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	2-2K1A, 4 PIN	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.89
Is Samacsys：	N	其他特性：	LOW NOISE
最大集电极电流 (IC)：	0.015 A	基于收集器的最大容量：	0.65 pF
集电极-发射极最大电压：	4.5 V	配置：	SINGLE
最高频带：	ULTRA HIGH FREQUENCY BAND	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e0	元件数量：	1
端子数量：	4	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	16000 MHz
Base Number Matches：	1

MT4S32U 数据手册

MT4S32U

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

M T 4 S 3 2 U

VHF~UHF Band Low Noise Amplifier Applications

•

Low Noise Figure: NF = 1.4 dB (f = 2 GHz)

High Gain: |S21e| = 13.5 dB (f = 2 GHz)

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

4.5

CBO

CEO

EBO

1.5

°C

Base current

7.5

Collector power dissipation

Junction temperature

Storage temperature range

67.5

125

Tstg

−55~125

Marking

Weight: 0.006 g

Type name

U 4

000707EAA1

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general

can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the

buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and

to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or

damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the

most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling

Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal

equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are

neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or

failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy

control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control

instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document

shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by

TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its

use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or

others.

• The information contained herein is subject to change without notice.

2000-09-11 1/8

12 3 4 5 6 7 8

中文翻译

下载PDF

与MT4S32U相关器件

型号	品牌	获取价格	描述	数据表
MT4S34U	TOSHIBA	获取价格	SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
MT5	ETC	获取价格	5 WATT DC//DC CONVERTER SIINGLE & MULTIIPLE OUTPUTS
MT-5	RIEDON	获取价格	Low Ohm Power Resistors
MT-50.0032OHM0.1%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.0032ohm, 0.1% +/-Tol, -20,20ppm/Cel
MT-50.00597OHM0.5%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.00597ohm, 0.5% +/-Tol, -20,20ppm/Cel
MT-50.00619OHM0.1%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.00619ohm, 0.1% +/-Tol, -20,20ppm/Cel
MT-50.00619OHM0.5%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.00619ohm, 0.5% +/-Tol, -20,20ppm/Cel
MT-50.00816OHM0.1%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.00816ohm, 0.1% +/-Tol, -20,20ppm/Cel
MT-50.00845OHM0.5%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.00845ohm, 0.5% +/-Tol, -20,20ppm/Cel
MT-50.00845OHM1%4T	VISHAY	获取价格	Fixed Resistor, Wire Wound, 5W, 0.00845ohm, 1% +/-Tol, -20,20ppm/Cel

与MT4S32U相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

46
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

35
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

64
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

61

产品中心

服务支持

精选活动

关于我们

帮助中心

MT4S32U

MT4S32U 技术参数

MT4S32U 数据手册

与MT4S32U相关器件

与MT4S32U相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MT4S32U

MT4S32U 技术参数

MT4S32U 数据手册

与MT4S32U相关器件

与MT4S32U相关文章

您还可以找

您在本页遇到什么问题？