Datasheet > MT4S03A_07

MT4S03A_07

更新时间： 2024-11-09 03:29:39

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
3页	107K
描述
VHF~UHF Band Low Noise Amplifier Applications

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中文翻译

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数据手册

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MT4S03A_07 数据手册

MT4S03A

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT4S03A

VHF~UHF Band Low Noise Amplifier Applications

Unit: mm

•

Low noise figure: NF = 1.4dB (f = 2 GHz)

High gain: Gain = 9dB (f = 2 GHz)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Base current

°C

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

150

125

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

TOSHIBA

2-3J1C

Weight: 0.012 g (typ.)

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Marking

Microwave Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

= 1 V, I = 5 mA

Min

Typ.

Max

Unit

(1)

(2)

4.5

5.5

⎯

Transition frequency

GHz

= 3 V, I = 10 mA

⎪S ⎪²(1)

= 1 V, I = 5 mA, f = 2 GHz

3.5

21e

Insertion gain

Noise figure

⎪S ⎪²(2)

= 3 V, I = 20 mA, f = 2 GHz

21e

NF (1)

NF (2)

= 1 V, I = 5 mA, f = 2 GHz

⎯

1.7

1.4

= 3 V, I = 7 mA, f = 2 GHz

2.2

2007-11-01

12 3

中文翻译

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