Datasheet > MT110CB18T1

MT110CB18T1

更新时间： 2024-10-15 01:09:47

品牌	Logo	应用领域
江苏爱普特 - APTSEMI		/
页数	文件大小	规格书
4页	208K
描述
Thyristor/Diode Modules

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数据手册

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MT110CB18T1 数据手册

MT110CB18T1

Thyristor/Diode Modules

VRRM / VDRM

IFAV / ITAV

800 to 1800V

110Amp

Applications

Power Converters

Lighting Control

DC Motor Control and Drives

Heat and temperature control

Circuit

Features

International standard package

High Surge Capability

Glass passivated chip

Simple Mounting

Heat transfer through aluminum oxide

DBCceramic isolated metal baseplate

UL recognized applied for file no. E360040

Module Type

TYPE

VRRM/VDRM

800V

VRSM

900V

1300V

1700V

1900V

MT110CB08T1

MT110CB12T1

MT110CB16T1

MT110CB18T1

1200V

1600V

1800V

◆Diode

Maximum Ratings

Symbol

Item

Conditions

Values

Units

IFSM

i²t

Output Current(D.C.)

Tc=85℃

110

Surge forward current

t=10mS Tvj =45℃

2250

A²s

Circuit Fusing Consideration

Isolation Breakdown Voltage(R.M.S)

Operating Junction Temperature

Storage Temperature

25000

Visol

Tvj

a.c.50HZ;r.m.s.;1min

3000

-40 to +125

3±15%

5±15%

100

℃

Tstg

℃

Mounting Torque

To terminals(M5)

To heatsink(M6)

Weight

Module（Approximately）

Thermal Characteristics

Symbol

Rth(j-c)

Item

Conditions

Junction to Case

Values

0.14

Units

℃/W

Thermal Impedance, max.

Rth(c-s) Thermal Impedance, max.

Case to Heatsink

0.10

℃/W

Electrical Characteristics

Values

Min. Typ.

Symbol

VFM

Item

Conditions

Units

Max.

1.65

Forward Voltage Drop, max.

T=25℃IF =300A

Tvj =25℃VRD=VRRM

Tvj =125℃VRD=VRRM

Repetitive Peak Reverse Current,

max.

≤0.5

≤6

IRRM

Document Number: S-M0049

Rev.1.0, May.31, 2013

www.apt-semi.com

12 3 4

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