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MT110CB18T1 PDF预览

MT110CB18T1

更新时间: 2024-10-31 01:07:51
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 240K
描述
Thyristor/Diode Modules

MT110CB18T1 数据手册

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RoHS  
MT110CB-T1  
COMPLIANT  
Thyristor/Diode Modules  
VRRM / VDRM  
IFAV / ITAV  
800 to 1800V  
110A  
Applications  
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
International standard package  
High Surge Capability  
Glass passivated chip  
1
2
3
Simple Mounting  
5
4
Heat transfer through aluminum oxide  
DBCceramic isolated metal baseplate  
UL recognized applied for file no. E360040  
Module Type  
TYPE  
VRRM/VDRM  
800V  
VRSM  
900V  
1300V  
1700V  
1900V  
MT110CB08T1  
MT110CB12T1  
MT110CB16T1  
MT110CB18T1  
1200V  
1600V  
1800V  
Diode  
Maximum Ratings  
Symbol  
Item  
Conditions  
Values  
Units  
A
ID  
IFSM  
i2t  
Output Current(D.C.)  
Tc=85  
110  
Surge forward current  
Circuit Fusing Consideration  
t=10mS Tvj =45℃  
2250  
A
A2s  
25000  
Visol  
Tvj  
Isolation Breakdown Voltage(R.M.S)  
Operating Junction Temperature  
Storage Temperature  
a.c.50HZ;r.m.s.;1min  
3000  
V
-40 to +125  
-40 to +125  
3±15%  
5±15%  
100  
Tstg  
Mt  
Mounting Torque  
To terminals(M5)  
To heatsink(M6)  
Nm  
Nm  
g
Ms  
Weight  
ModuleApproximately  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Item  
Conditions  
Junction to Case  
Values  
0.14  
Units  
/W  
Thermal Impedance, max.  
Rth(c-s) Thermal Impedance, max.  
Case to Heatsink  
0.10  
/W  
Electrical Characteristics  
Values  
Min. Typ.  
Symbol  
VFM  
Item  
Conditions  
Units  
Max.  
1.65  
Forward Voltage Drop, max.  
V
T=25IF =300A  
Tvj =25VRD=VRRM  
Tvj =125VRD=VRRM  
Repetitive Peak Reverse Current,  
max.  
≤0.5  
6  
mA  
mA  
IRRM  
S-M049  
www.21yangjie.com  
Rev.2.0, 27-May-17  
1

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