是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | DO-214AB |
包装说明: | R-PDSO-C2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.22 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
最大击穿电压: | 85 V | 最小击穿电压: | 77.8 V |
击穿电压标称值: | 81.4 V | 最大钳位电压: | 113 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AB |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 70 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Matte Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MXLSMCJLCE70AE3 | MICROSEMI |
完全替代 |
Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MXLSMCGLCE70AE3 | MICROSEMI |
类似代替 |
Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSMCJLCE70ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MSMCJLCE70E3/TR | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCJLCE75 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCJLCE75/TR | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCJLCE75A | MICROSEMI |
获取价格 |
暂无描述 | |
MSMCJLCE75AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MSMCJLCE75ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MSMCJLCE75E3 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCJLCE75E3/TR | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCJLCE8.0/TR | MICROSEMI |
获取价格 |
Transient Suppressor, |