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MSMCJ110A/TR PDF预览

MSMCJ110A/TR

更新时间: 2024-11-14 13:42:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 440K
描述
Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, PLASTIC, SMCJ, 2 PIN

MSMCJ110A/TR 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:R-PDSO-J2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.58Is Samacsys:N
其他特性:HIGH RELIABILITY最大击穿电压:135 V
最小击穿电压:122 V击穿电压标称值:128.5 V
最大钳位电压:177 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214ABJESD-30 代码:R-PDSO-J2
JESD-609代码:e0湿度敏感等级:1
最大非重复峰值反向功率耗散:1500 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.56 W认证状态:Not Qualified
参考标准:MIL-19500最大重复峰值反向电压:110 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Tin/Lead (Sn/Pb)
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MSMCJ110A/TR 数据手册

 浏览型号MSMCJ110A/TR的Datasheet PDF文件第2页浏览型号MSMCJ110A/TR的Datasheet PDF文件第3页浏览型号MSMCJ110A/TR的Datasheet PDF文件第4页浏览型号MSMCJ110A/TR的Datasheet PDF文件第5页浏览型号MSMCJ110A/TR的Datasheet PDF文件第6页浏览型号MSMCJ110A/TR的Datasheet PDF文件第7页 

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