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MSMCJ110AE3/TR13 PDF预览

MSMCJ110AE3/TR13

更新时间: 2024-11-14 13:42:03
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 440K
描述
Trans Voltage Suppressor Diode, 1500W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN

MSMCJ110AE3/TR13 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-214AB
包装说明:R-PDSO-J2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.74
Is Samacsys:N其他特性:HIGH RELIABILITY
最大击穿电压:135 V最小击穿电压:122 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AB
JESD-30 代码:R-PDSO-J2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:1500 W
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.56 W
参考标准:MIL-19500最大重复峰值反向电压:110 V
表面贴装:YES技术:AVALANCHE
端子面层:MATTE TIN端子形式:J BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MSMCJ110AE3/TR13 数据手册

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