是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | DO-215AB | 包装说明: | R-PDSO-G2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.25 | 其他特性: | HIGH RELIABILITY |
最大击穿电压: | 71.2 V | 最小击穿电压: | 64.4 V |
击穿电压标称值: | 67.8 V | 最大钳位电压: | 93.6 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-215AB |
JESD-30 代码: | R-PDSO-G2 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | UNIDIRECTIONAL | 最大功率耗散: | 5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 58 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSMCGLCE58ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
MSMCGLCE58E3 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCGLCE58E3/TR | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCGLCE6.5/TR | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCGLCE6.5A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MSMCGLCE6.5AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MSMCGLCE6.5AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MSMCGLCE6.5ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 1500W, 6.5V V(RWM), Unidirectional, 1 Element, Silicon, DO | |
MSMCGLCE6.5E3 | MICROSEMI |
获取价格 |
Transient Suppressor, | |
MSMCGLCE6.5E3/TR | MICROSEMI |
获取价格 |
Transient Suppressor, |