生命周期: | Active | 包装说明: | R-PDSO-C2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.76 |
其他特性: | EXCELLENT CLAMPING CAPABILITY, PRSM-MIN | 最大击穿电压: | 34.4 V |
最小击穿电压: | 31.1 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AA | JESD-30 代码: | R-PDSO-C2 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性: | BIDIRECTIONAL | 参考标准: | AEC-Q101 |
最大重复峰值反向电压: | 28 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子形式: | C BEND |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSMBJ28CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
MSMBJ28CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
MSMBJ28CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 28V V(RWM), Bidirectional, 1 Element, Silicon, DO-21 | |
MSMBJ28CAE3TR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN | |
MSMBJ28CATR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN | |
MSMBJ2K3.0/TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 2000W, 3V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MSMBJ2K3.0E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 2000W, 3V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MSMBJ2K3.0E3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 2000W, 3V V(RWM), Unidirectional, 1 Element, Silicon, DO-2 | |
MSMBJ2K3.0E3TR | MICROSEMI |
获取价格 |
2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
MSMBJ2K3.0TR | MICROSEMI |
获取价格 |
2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2 |