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MSMBJ2K3.3 PDF预览

MSMBJ2K3.3

更新时间: 2024-11-16 14:53:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
6页 438K
描述
Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

MSMBJ2K3.3 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:R-PDSO-J2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
其他特性:HIGH RELIABILITY最小击穿电压:4.6 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-J2JESD-609代码:e0
最大非重复峰值反向功率耗散:2000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:1.38 W认证状态:Not Qualified
最大重复峰值反向电压:3.3 V表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD
端子形式:J BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MSMBJ2K3.3 数据手册

 浏览型号MSMBJ2K3.3的Datasheet PDF文件第2页浏览型号MSMBJ2K3.3的Datasheet PDF文件第3页浏览型号MSMBJ2K3.3的Datasheet PDF文件第4页浏览型号MSMBJ2K3.3的Datasheet PDF文件第5页浏览型号MSMBJ2K3.3的Datasheet PDF文件第6页 

MSMBJ2K3.3 替代型号

型号 品牌 替代类型 描述 数据表
MSMBJ2K3.3E3 MICROSEMI

完全替代

Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO

与MSMBJ2K3.3相关器件

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MSMBJ2K3.3/TR MICROSEMI

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Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
MSMBJ2K3.3E3 MICROSEMI

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Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
MSMBJ2K3.3E3/TR MICROSEMI

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Trans Voltage Suppressor Diode, 2000W, 3.3V V(RWM), Unidirectional, 1 Element, Silicon, DO
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2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
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2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
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2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
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