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MSMBJ12AE3/TR PDF预览

MSMBJ12AE3/TR

更新时间: 2024-11-16 19:37:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
7页 502K
描述
Trans Voltage Suppressor Diode, 600W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

MSMBJ12AE3/TR 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.47其他特性:HIGH RELIABILITY
最大击穿电压:14.7 V最小击穿电压:13.3 V
击穿电压标称值:14 V最大钳位电压:19.9 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性:UNIDIRECTIONAL最大功率耗散:1.38 W
认证状态:Not Qualified最大重复峰值反向电压:12 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MSMBJ12AE3/TR 数据手册

 浏览型号MSMBJ12AE3/TR的Datasheet PDF文件第2页浏览型号MSMBJ12AE3/TR的Datasheet PDF文件第3页浏览型号MSMBJ12AE3/TR的Datasheet PDF文件第4页浏览型号MSMBJ12AE3/TR的Datasheet PDF文件第5页浏览型号MSMBJ12AE3/TR的Datasheet PDF文件第6页浏览型号MSMBJ12AE3/TR的Datasheet PDF文件第7页 

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