Datasheet > 存储 > 其他内存集成电路> MSM5412222B-30TS-K

MSM5412222B-30TS-K

更新时间： 2024-02-18 05:25:25

品牌	Logo	应用领域
冲电气 - OKI		存储内存集成电路光电二极管
页数	文件大小	规格书
17页	134K
描述
262,214-Word 】 12-Bit Field Memory

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MSM5412222B-30TS-K 技术参数

生命周期：	Transferred	零件包装代码：	TSOP2
包装说明：	TSOP2,	针数：	44
Reach Compliance Code：	unknown	HTS代码：	8542.32.00.71
风险等级：	5.22	Is Samacsys：	N
JESD-30 代码：	R-PDSO-G44	长度：	18.41 mm
内存密度：	3145728 bit	内存集成电路类型：	MEMORY CIRCUIT
内存宽度：	12	功能数量：	1
端子数量：	44	字数：	262144 words
字数代码：	256000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	256KX12	封装主体材料：	PLASTIC/EPOXY
封装代码：	TSOP2	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE	认证状态：	Not Qualified
座面最大高度：	1.2 mm	最大供电电压 (Vsup)：	5.5 V
最小供电电压 (Vsup)：	4.5 V	标称供电电压 (Vsup)：	5 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.8 mm	端子位置：	DUAL
宽度：	10.16 mm	Base Number Matches：	1

MSM5412222B-30TS-K 数据手册

浏览型号MSM5412222B-30TS-K的Datasheet PDF文件第2页

浏览型号MSM5412222B-30TS-K的Datasheet PDF文件第3页

浏览型号MSM5412222B-30TS-K的Datasheet PDF文件第4页

浏览型号MSM5412222B-30TS-K的Datasheet PDF文件第5页

浏览型号MSM5412222B-30TS-K的Datasheet PDF文件第6页

浏览型号MSM5412222B-30TS-K的Datasheet PDF文件第7页

FEDS5412222B-01

Issue Date: Nov.,20, 2002

OKI Semiconductor

MSM5412222B

262,214-Word × 12-Bit Field Memory

GENERAL DESCRIPTION

The OKI MSM5412222B is a high performance 3-Mbit, 256K × 12-bit, Field Memory. It is especially designed

for high-speed serial access applications such as HDTVs, conventional NTSC TVs, VTRs, digital movies and

Multi-media systems. MSM5412222B is a FRAM for wide or low end use in general commodity TVs and VTRs

exclusively. MSM5412222B is not designed for the other use or high end use in medical systems, professional

graphics systems which require long term picture storage, data storage systems and others. More than two

MSM5412222Bs can be cascaded directly without any delay devices among the MSM5412222Bs. (Cascading of

MSM5412222B provides larger storage depth or a longer delay).

Each of the 12-bit planes has separate serial write and read ports. These employ independent control clocks to

support asynchronous read and write operations. Different clock rates are also supported that allow alternate data

rates between write and read data streams.

The MSM5412222B provides high speed FIFO, First-In First-Out, operation without external refreshing:

MSM5412222B refreshes its DRAM storage cells automatically, so that it appears fully static to the users.

Moreover, fully static type memory cells and decoders for serial access enable the refresh free serial access

operation, so that serial read and/or write control clock can be halted high or low for any duration as long as the

power is on. Internal conflicts of memory access and refreshing operations are prevented by special arbitration

logic.

The MSM5412222B’s function is simple, and similar to a digital delay device whose delay-bit-length is easily set

by reset timing. The delay length, number of read delay clocks between write and read, is determined by externally

controlled write and read reset timings.

Additional SRAM serial registers, or line buffers for the initial access of 256 × 12-bit enable high speed

first-bit-access with no clock delay just after the write or read reset timings.

Additionally, the MSM5412222B has write mask function or input enable function (IE), and read-data skipping

function or output enable function (OE) . The differences between write enable (WE) and input enable (IE), and

between read enable (RE) and output enable (OE) are that WE and RE can stop serial write/read address

increments, but IE and OE cannot stop the increment, when write/read clocking is continuously applied to

MSM5412222B. The input enable (IE) function allows the user to write into selected locations of the memory

only, leaving the rest of the memory contents unchanged. This facilitates data processing to display a “picture in

picture” on a TV screen.

The MSM5412222B is similar in operation and functionality to OKI 1-Mbit Field Memory MSM514222C and

2-Mbit Field Memory MSM518222A. Three MSM514222Cs or one MSM514222C plus one MSM518222A can

be replaced simply by one MSM5412222B.

1/17

12 3 4 5 6 7...17

中文翻译

下载PDF

与MSM5412222B-30TS-K相关器件

型号	品牌	获取价格	描述	数据表
MSM5412222B-XXJS	OKI	获取价格	262,214-Word 】 12-Bit Field Memory
MSM5412222B-XXTS-K	OKI	获取价格	262,214-Word 】 12-Bit Field Memory
MSM5416125A	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-40JS	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-40TS-K	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-45JS	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-45TS-K	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-50JS	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-50TS-K	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
MSM5416125A-60JS	OKI	获取价格	131,072-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

与MSM5412222B-30TS-K相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

16
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

16
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

13
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

16

产品中心

服务支持

精选活动

关于我们

帮助中心

MSM5412222B-30TS-K

MSM5412222B-30TS-K 技术参数

MSM5412222B-30TS-K 数据手册

与MSM5412222B-30TS-K相关器件

与MSM5412222B-30TS-K相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MSM5412222B-30TS-K

MSM5412222B-30TS-K 技术参数

MSM5412222B-30TS-K 数据手册

与MSM5412222B-30TS-K相关器件

与MSM5412222B-30TS-K相关文章

您还可以找

您在本页遇到什么问题？