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MSM511000C-45 PDF预览

MSM511000C-45

更新时间: 2024-02-13 08:14:00
品牌 Logo 应用领域
冲电气 - OKI /
页数 文件大小 规格书
15页 223K
描述
1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

MSM511000C-45 技术参数

生命周期:Obsolete零件包装代码:ZIP
包装说明:ZIP,针数:20
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.83
Is Samacsys:N访问模式:FAST PAGE
最长访问时间:45 ns其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码:R-PZIP-T19长度:25.5 mm
内存密度:1048576 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:1功能数量:1
端口数量:1端子数量:19
字数:1048576 words字数代码:1000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX1
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:ZIP封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
刷新周期:512座面最大高度:10.16 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:THROUGH-HOLE端子节距:1.27 mm
端子位置:ZIG-ZAG宽度:2.8 mm
Base Number Matches:1

MSM511000C-45 数据手册

 浏览型号MSM511000C-45的Datasheet PDF文件第5页浏览型号MSM511000C-45的Datasheet PDF文件第6页浏览型号MSM511000C-45的Datasheet PDF文件第7页浏览型号MSM511000C-45的Datasheet PDF文件第9页浏览型号MSM511000C-45的Datasheet PDF文件第10页浏览型号MSM511000C-45的Datasheet PDF文件第11页 
¡ Semiconductor  
MSM511000C/CL  
Notes: 1. A start-up delay of 100 µs is required after power-up, followed by a minimum of  
eight initialization cycles (RAS-only refresh or CAS before RAS refresh) before  
proper device operation is achieved.  
2. The AC characteristics assume t = 5 ns.  
T
3. V (Min.) and V (Max.) are reference levels for measuring input timing signals.  
IH  
IL  
Transition times (t ) are measured between V and V .  
T
IH  
IL  
4. This parameter is measured with a load circuit equivalent to 2 TTL loads and 100 pF.  
5. Operation within the t (Max.) limit ensures that t (Max.) can be met.  
RCD  
RAC  
t
(Max.) is specified as a reference point only. If t  
(Max.) limit, then the access time is controlled by t  
is greater than the specified  
RCD  
RCD  
t
.
RCD  
CAC  
6. Operation within the t  
(Max.) limit ensures that t  
(Max.) can be met.  
RAD  
RAC  
t
(Max.) is specified as a reference point only. If t  
(Max.) limit, then the access time is controlled by t  
is greater than the specified  
RAD  
RAD  
t
.
RAD  
AA  
7. tOFF (Max.)definesthetimeatwhichtheoutputachievestheopencircuitconditionand  
is not referenced to output voltage levels.  
8. t  
9. t  
or t  
must be satisfied for a read cycle.  
RCH  
RRH  
, t  
, t  
, t  
and t  
are not restrictive operating parameters. They are  
WCS CWD RWD AWD  
CPWD  
included in the data sheet as electrical characteristics only. If t  
t  
(Min.), then  
WCS WCS  
the cycle is an early write cycle and the data out will remain open circuit (high  
impedance) throughout the entire cycle. If t t (Min.) , t t (Min.),  
CWD  
CWD  
RWD  
RWD  
t
t  
(Min.) and t  
t  
(Min.), then the cycle is a read modify write  
AWD  
AWD  
CPWD  
CPWD  
cycle and data out will contain data read from the selected cell; if neither of the above  
sets of conditions is satisfied, then the condition of the data out (at access time) is  
indeterminate.  
10. These parameters are referenced to the CAS leading edge in an early write cycle, and  
to the WE leading edge in a read modify write cycle.  
8/15  

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