是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CSFM-T12 |
针数: | 12 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.92 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 570 mJ | 外壳连接: | ISOLATED |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (Abs) (ID): | 14 A | 最大漏极电流 (ID): | 30 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CSFM-T12 | 元件数量: | 6 |
端子数量: | 12 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MSK3020 | MSK |
获取价格 |
H-BRIDGE MOSFET POWER MODULE | |
MSK3554 | MSK |
获取价格 |
HIGH SPEED, WIDEBAND OPERATIONAL AMPLIFIER | |
MSK3554B | MSK |
获取价格 |
HIGH SPEED, WIDEBAND OPERATIONAL AMPLIFIER | |
MSK3554E | MSK |
获取价格 |
Operational Amplifier, 1 Func, 2000uV Offset-Max, BIPolar, MBFM8, TO-3, 8 PIN | |
MSK3554H | MSK |
获取价格 |
暂无描述 | |
MSK4100 | MSK |
获取价格 |
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, | |
MSK4101 | MSK |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, | |
MSK4101B | MSK |
获取价格 |
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, | |
MSK4200 | MSK |
获取价格 |
75 VOLT 5 AMP MOSFET H-BRIDGE PWM MOTOR DRIVER/AMPLIFIER | |
MSK4200 | ANAREN |
获取价格 |
H-BRIDGE PWM DRIVER |