Datasheet > MSG56BBB

MSG56BBB

更新时间： 2024-11-09 20:09:31

品牌	Logo	应用领域
松下 - PANASONIC		/
页数	文件大小	规格书
4页	424K
描述
RF Small Signal Bipolar Transistor, 1 X 0.90 MM, 0.40 HEIGHT, ROHS COMPLIANT, LEADLESS, ML6-N6, 7 PIN

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MSG56BBB 技术参数

生命周期：	Active	包装说明：	CHIP CARRIER, R-XBCC-N6
针数：	7	Reach Compliance Code：	unknown
风险等级：	5.72	JESD-30 代码：	R-XBCC-N6
端子数量：	6	最高工作温度：	125 °C
封装主体材料：	UNSPECIFIED	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	BOTTOM	Base Number Matches：	1

MSG56BBB 数据手册

This product complies with the RoHS Directive (EU 2002/95/EC).

Transistors

MSG56BBB

SiGeC HBT type

For low-noise ampliﬁers such as GSM, GPS, DMB, PCS, WLAN, and WiMAX

For general ampliﬁcation

 Package

 Overview

ꢀCode

ML6-N6

The MSG56BBA is silicon germanium carbon (SiGeC) transistors most suitable

for low-noise amplifiers for various applications that operating frequency

range at 1 GHz^*to 6 GHz.

ꢀPin Name

1: GND

4: RFOUT

5: VCC

2: EMI

Note) :Adjusted in the input/output matching circuit.

3: RFIN

6: CONT

7: GND

Features

 High power gain and low noise ﬁgure: G_P= 11.5 dB, NF = 1.6 dB

 Thin small leadless package (environmental resin)

1.0 mm × 0.9 mm (height 0.4 mm)

 Marking Symbol: 7C

 The operating frequency, the operating current, the noise ﬁgure, the gain, and

the distortion characteristics can be adjusted by an input/output matching

circuit.

 Internal Connection

 Built-in overvoltage input protection circuit

Bias

LNA

 Absolute Maximum Ratings T_a= 25°C

Parameter

Supply voltage

Symbol

V_CC

I_CC

Rating

Unit

3.8

Consumption current

°C

Total power dissipation

Junction temperature

P_T

T_j

125

Operating ambient temperature

Storage temperature

T_opr

T_stg

–40 to +85

–55 to +125

°C

 Electrical Characteristics T_a= 25°C±3°C

Parameter

Symbol

Conditions

Min

3.0

4.0

Typ

Max

5.2

Unit

Consumption current

I_CC

V_CC= 2.8 V, R_cont = 1100 W

V_CC= 2.8 V, R_cont = 560 W

4.0

6.0

Consumption current ^*

Power gain ^*

8.0

V_CC= 2.8 V, R_cont = 560 W,

G_P

10.3

11.5

1.6

f = 5.2 GHz

V_CC= 2.8 V, R_cont = 560 W,

Noise ﬁgure ^*

2.2

f = 5.2 GHz

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

2. : Speciﬁcations are guaranteed by design. (Including the PCB loss)

 Recommended Operating Range

Parameter

Supply voltage range ^*

Symbol

V_CC

T_a

Min

2.2

−25

Typ

2.8

Max

3.6

Unit

Operating ambient temperature range

Operating frequency range

°C

f_IN

GHz

Note) : Consumption current will be change, between the operating range of V_CC, with a ﬁxed external resistor

Publication date: February 2008

SJC00412AED

12 3 4

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