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MSD6150RL PDF预览

MSD6150RL

更新时间: 2024-11-19 13:11:51
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摩托罗拉 - MOTOROLA 二极管
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MSD6150RL 数据手册

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Order this document  
by MSD6150/D  
SEMICONDUCTOR TECHNICAL DATA  
3 Anode  
1
2
3
CASE 29–04, STYLE 4  
TO–92 (TO–226AA)  
Cathode 1  
2 Cathode  
MAXIMUM RATINGS (EACH DIODE)  
Rating  
Reverse Voltage  
Symbol  
Value  
Unit  
Vdc  
V
R
70  
Peak Forward Recurrent Current  
I
200  
500  
mAdc  
mAdc  
F
Peak Forward Surge Current  
(Pulse Width = 10 µsec)  
I
FM(surge)  
(1)  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
(1)  
T , T  
J stg  
Operating and Storage Junction  
Temperature Range  
55 to +135  
°C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Breakdown Voltage  
(I = 100 µAdc)  
V
70  
Vdc  
(BR)  
(BR)  
Reverse Current  
I
R
0.80  
5.0  
0.1  
1.0  
8.0  
100  
µAdc  
Vdc  
pF  
(V = 50 Vdc)  
R
Forward Voltage  
(I = 10 mAdc)  
F
V
F
Capacitance  
(V = 0)  
R
C
Reverse Recovery Time  
t
rr  
ns  
(I = I = 10 mAdc, V = 5.0 Vdc, i = 1.0 mAdc)  
rr  
F
R
R
1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: P = 1.0 W @ T = 25°C,  
D
C
Derate above 8.0 mW/°C, P = 10 W @ T = 25°C, Derate above 80 mW/°C, T , T = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.  
D
C
J
stg  
Motorola, Inc. 1997  

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