MSD6150RLRP

更新时间： 2024-11-23 13:11:51

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		二极管
页数	文件大小	规格书
4页	68K
描述
Rectifier Diode, 2 Element, Silicon, TO-92, PLASTIC, CASE 29-04, TO-226AA, 3 PIN

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技术参数
数据手册

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MSD6150RLRP 技术参数

生命周期：	Obsolete	包装说明：	O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.74	配置：	COMMON ANODE, 2 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	2	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	最大功率耗散：	0.625 W
认证状态：	Not Qualified	最大反向恢复时间：	0.1 µs
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	Base Number Matches：	1

MSD6150RLRP 数据手册

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SEMICONDUCTOR TECHNICAL DATA

3 Anode

CASE 29–04, STYLE 4

TO–92 (TO–226AA)

Cathode 1

2 Cathode

MAXIMUM RATINGS (EACH DIODE)

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

Peak Forward Recurrent Current

200

500

mAdc

Peak Forward Surge Current

(Pulse Width = 10 µsec)

FM(surge)

(1)

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

(1)

T , T

J stg

Operating and Storage Junction

Temperature Range

–55 to +135

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Breakdown Voltage

(I = 100 µAdc)

—

Vdc

(BR)

Reverse Current

—

0.80

5.0

—

0.1

1.0

8.0

100

µAdc

Vdc

(V = 50 Vdc)

Forward Voltage

(I = 10 mAdc)

Capacitance

(V = 0)

Reverse Recovery Time

(I = I = 10 mAdc, V = 5.0 Vdc, i = 1.0 mAdc)

1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: P = 1.0 W @ T = 25°C,

Derate above 8.0 mW/°C, P = 10 W @ T = 25°C, Derate above 80 mW/°C, T , T = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C.

stg

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

12 3 4

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