Datasheet > MSC81118

MSC81118

更新时间： 2024-09-15 22:51:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体放大器晶体管射频微波
页数	文件大小	规格书
5页	105K
描述
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS

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MSC81118 数据手册

MSC81118

RF & MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

EMITTER BALLASTED

VSWR CAPABILITY :1 @ RATED

∞

CONDITIONS

HERMETIC STRIPAC PACKAGE

P_OUT

1.0 GHz

2.0 W MIN. WITH 10 dB GAIN @

.250 2LFL (S010)

hermetically sealed

ORDER CODE

BRANDING

81118

MSC81118

PIN CONNECTION

DESCRIPTION

The MSC81118 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone, emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at

any phase angle under rated conditions.

1. Collector

2. Base

3. Emitter

4. Base

The MSC81118 was designed for Class C amplifier

applications in the 0.4 - 1.2 GHz frequency range.

= 25 C)

ABSOLUTE MAXIMUM RATINGS (T

case

Symbol

P_DISS

I_C

Parameter

Value

6.25

200

Unit

Power Dissipation*

Device Current*

(T_C≤ 75°C)

V_CC

T_J

Collector-Supply Voltage*

Junction Temperature

Storage Temperature

200

T_STG

− 65 to +200

THERMAL DATA

C/W

R_TH(j-c)

Junction-Case Thermal Resistance*

*Applies only to rated RF amplifier operation

1/5

October 1992

12 3 4 5

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