Datasheet > MS1227

MS1227

更新时间： 2024-11-02 03:48:23

品牌	Logo	应用领域
ADPOW		晶体晶体管射频微波
页数	文件大小	规格书
3页	113K
描述
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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中文翻译

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数据手册

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MS1227 数据手册

MS1227

RF & MICROWAVE TRANSISTORS

HF SSB APPLICATIONS

Features

30 MHz

12.5 VOLTS

GOLD METALIZATION

P_OUT= 20 W MINIMUM

G_P= 15 dB

COMMON EMITTER CONFIGURATION

DESCRIPTION:

The MS1227 is a 12.5V epitaxial NPN planar transistor designed

primarily for SSB communications. This device utilizes emitter

ballasting for improved ruggedness and reliability.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V_CBO

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Device Current

4.0

4.5

P_DISS

T_J

Power Dissipation

°C

Junction Temperature

Storage Temperature

+200

T_STG

-65 to +150

Thermal Data

R_TH(J-C)

Junction-case Thermal Resistance

2.2

°C/W

MS1227.PDF 10-28-02

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein

Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.

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