Datasheet > MRSS31U

MRSS31U

更新时间： 2024-09-27 21:55:47

品牌	Logo	应用领域
日电电子 - NEC		传感器
页数	文件大小	规格书
3页	33K
描述
Micro power Built-in IC ultra-minimum MR sensor

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中文翻译

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数据手册

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MRSS31U 数据手册

DATA SHEET

MRSS31U

MR Sensor

Micro power Built-in IC ultra-minimum MR sensor

FEATURES

*Micro power (15µW(typ):Vcc=3V)

and High-sensitivity(2mT(typ))

(suited for battery-operation)

*Ultra-small size

1.Dimension (Unit:mm)

+0.1

-0.05

+0.1

0.3

0.15

-0.05

MR(Magneto-resistance)sensor

0～0.05

* Volume and mounting area are 50%

smaller than MRSS22L.

Gnd

* Height is about 4mm lower than

MRSS22L.

*Operating in one way magnetic field

*Operating with independent pole

(easily manufacture)

Vcc

Out

0.65

*Superior Temperature stability

*Lead free goods

±0.2

2.0

Max0.8

2.Fundamental Operation

2-1.Direction of Magnetic Field

2-2.Circuit Block

Ｖｃｃ

SWITCH

Ｒ1

Ｒ2

SAMPLING

LOGIC

LATCH

ＯＵＴ

ＧＮＤ

MOS

Operation

Op-Amp

Ｒ3

Ｒ4

R1～R4：MR Elements

2-3.Performance Characteristics (25±3ºC)

Operating require

Condition

Output

Voltage

H = 0 mT(Magnetic Flux Density)

[0 A/m (Magnetic Field Strength)]

When power switch is ON

Hi-level

H ≥ 2.0(Typ)mT(Magnetic Flux Density)

When magnetic field is applied

Lo-level

Hi-level

[1.6kA/m (Magnetic Field Strength)]

H ≤ 0.5 mT

(Magnetic Flux Density)

When magnetic field is applied

[0.4kA/m(Magnetic Field Strength)]

12 3

中文翻译

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