是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.41 | 熔断特性: | TIME LAG |
主体高度: | 7.7 mm | 主体长度或直径: | 8.35 mm |
电路保护类型: | Electric Fuse | 保险丝尺寸: | MICRO |
JESD-609代码: | e3 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 物理尺寸: | 8.35mm x 7.7mm |
额定分断能力: | 35 A | 额定电流: | 1.6 A |
额定电压: | 250 V | 参考标准: | CCC, CE, CSA, PSE, UL, VDE |
端子面层: | Matte Tin (Sn) | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRT100 | BEL |
获取价格 |
Time Lag Radial Lead Micro Fuse Series | |
MRT100AMMO | BEL |
获取价格 |
Electric Fuse, Time Lag Blow, 0.1A, 35A (IR), MICRO, | |
MRT100KP100A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, | |
MRT100KP100AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, | |
MRT100KP100CA/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, P | |
MRT100KP100CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 100V V(RWM), Bidirectional, 1 Element, Silicon, R | |
MRT100KP100CATR | MICROSEMI |
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100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 5A, 2 PIN | |
MRT100KP110A/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, | |
MRT100KP110AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, | |
MRT100KP110AE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100000W, 110V V(RWM), Unidirectional, 1 Element, Silicon, |