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MRFX1K80HR5 PDF预览

MRFX1K80HR5

更新时间： 2024-02-21 07:37:45
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
22页 1198K
描述
RF Power Field-Effect Transistor

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MRFX1K80HR5 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：2.08
峰值回流温度（摄氏度）：260处于峰值回流温度下的最长时间：40
Base Number Matches：1

MRFX1K80HR5 数据手册

 浏览型号MRFX1K80HR5的Datasheet PDF文件第2页浏览型号MRFX1K80HR5的Datasheet PDF文件第3页浏览型号MRFX1K80HR5的Datasheet PDF文件第4页浏览型号MRFX1K80HR5的Datasheet PDF文件第5页浏览型号MRFX1K80HR5的Datasheet PDF文件第6页浏览型号MRFX1K80HR5的Datasheet PDF文件第7页 
Document Number: MRFX1K80H  
Rev. 0, 08/2017  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
High Ruggedness N--Channel  
Enhancement--Mode Lateral MOSFET  
MRFX1K80H  
This high ruggedness device is designed for use in high VSWR industrial,  
medical, broadcast, aerospace and mobile radio applications. Its unmatched  
input and output design supports frequency use from 1.8 to 400 MHz.  
1.8–400 MHz, 1800 W CW, 65 V  
WIDEBAND  
RF POWER LDMOS TRANSISTOR  
Typical Performance  
Frequency  
(MHz)  
V
DD  
(V)  
P
(W)  
G
η
D
(%)  
out  
ps  
Signal Type  
(dB)  
27.8  
27.1  
24.5  
23.6  
25.9  
23.5  
25.1  
22.8  
(1)  
27  
CW  
Pulse (100 μsec, 10% Duty Cycle)  
CW  
65  
65  
63  
60  
65  
65  
65  
63  
1800 CW  
1800 Peak  
1700 CW  
1600 CW  
1800 Peak  
1800 CW  
1800 Peak  
1700 Peak  
75.6  
69.5  
76.3  
82.5  
69.0  
78.0  
75.1  
64.9  
64  
81.36  
(2,3)  
87.5–108  
123/128  
144  
CW  
Pulse (100 μsec, 10% Duty Cycle)  
CW  
NI--1230H--4S  
(4)  
230  
Pulse (100 μsec, 20% Duty Cycle)  
Pulse (12 μsec, 10% Duty Cycle)  
325  
Load Mismatch/Ruggedness  
Frequency  
P
(W)  
Test  
Voltage  
in  
Gate A  
Gate B  
Drain A  
Drain B  
3
4
1
2
Signal Type  
VSWR  
(MHz)  
Result  
(4)  
230  
Pulse  
> 65:1 at all  
14 W Peak  
(3 dB  
Overdrive)  
65  
No Device  
Degradation  
(100 μsec, 20% Phase Angles  
Duty Cycle)  
1. Data from 27 MHz narrowband reference circuit (page 5).  
2. Data from 87.5–108 MHz broadband reference circuit (page 10).  
3. The values shown are the center band performance numbers across the indicated  
frequency range.  
4. Data from 230 MHz narrowband production test fixture (page 16).  
(Top View)  
Note: The backside of the package is the  
source terminal for the transistor.  
Features  
Figure 1. Pin Connections  
•
•
•
•
•
•
•
•
•
Unmatched input and output allowing wide frequency range utilization  
Device can be used single--ended or in a push--pull configuration  
Qualified up to a maximum of 65 VDD operation  
Characterized from 30 to 65 V for extended power range  
High breakdown voltage for enhanced reliability  
Suitable for linear application with appropriate biasing  
Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation  
Lower thermal resistance option in over--molded plastic package: MRFX1K80N  
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch  
Typical Applications  
•
•
Radio and VHF TV broadcast  
Aerospace  
– VHF omnidirectional range (VOR)  
– HF communications  
– Weather radar  
•
Industrial, scientific, medical (ISM)  
– Laser generation  
– Plasma generation  
– Particle accelerators  
– MRI, RF ablation and skin treatment  
– Industrial heating, welding and drying systems  
© 2017 NXP B.V.  
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