Datasheet > MRFX600H-230MHZ

MRFX600H-230MHZ

更新时间： 2024-01-18 18:34:18

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恩智浦 - NXP		/
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RF Power Field-Effect Transistor

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MRFX600H-230MHZ 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.56
Base Number Matches：	1

MRFX600H-230MHZ 数据手册

Document Number: MRFX600H

Rev. 0, 09/2018

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MRFX600H

MRFX600HS

MRFX600GS

Enhancement--Mode Lateral MOSFETs

These high ruggedness devices are designed for use in high VSWR

industrial, medical, broadcast, aerospace and mobile radio applications. Their

unmatched input and output design supports frequency use from 1.8 to

400 MHz.

1.8–400 MHz, 600 W CW, 65 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance

Frequency

(MHz)

(V)

(W)



out

Signal Type

(dB)

21.3

26.4

(%)

83.0

74.4

(1,2)

87.5–108

680 CW

600 Peak

NI--780H--4L

MRFX600H

(3)

230

Pulse

(100 sec, 20% Duty Cycle)

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

NI--780S--4L

MRFX600HS

(3)

230

Pulse

> 65:1 at all

2.5 Peak

(3 dB

No Device

(100 sec, 20% Phase Angles

Degradation

Duty Cycle)

Overdrive)

1. Measured in 87.5–108 MHz broadband reference circuit (page 5).

2. The values shown are the center band performance numbers across the indicated

frequency range.

3. Measured in 230 MHz production test fixture (page 10).

NI--780GS--4L

MRFX600GS

Features



Unmatched input and output allowing wide frequency range utilization

Output impedance fits a 4:1 transformer

Device can be used single--ended or in a push--pull configuration

Qualified up to a maximum of 65 V_DDoperation

Characterized from 30 to 65 V for extended power range

High breakdown voltage for enhanced reliability

Suitable for linear application with appropriate biasing

Gate A

Gate B

Drain A

Drain B

Integrated ESD protection with greater negative gate--source voltage range

for improved Class C operation



Included in NXP product longevity program with assured supply for a

minimum of 15 years after launch

(Top View)

Note: The backside of the package is the

source terminal for the transistor.

Typical Applications



Figure 1. Pin Connections

Industrial, scientific, medical (ISM)

– Laser generation

– Plasma generation

– Particle accelerators

– MRI, RF ablation and skin treatment

– Industrial heating, welding and drying systems

Radio and VHF TV broadcast

Aerospace



– HF communications

– Radar



Mobile radio

– HF and VHF communications

– PMR base stations

 2018 NXP B.V.

MRFX600H MRFX600HS MRFX600GS

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...20

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