Datasheet > MRFX1K80N

MRFX1K80N

更新时间： 2024-03-03 10:10:20

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
21页	1643K
描述
Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V

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MRFX1K80N 数据手册

Document Number: MRFX1K80N

Rev. 0, 04/2018

NXP Semiconductors

Technical Data

RF Power LDMOS Transistors

High Ruggedness N--Channel

MRFX1K80N

Enhancement--Mode Lateral MOSFETs

MRFX1K80GN

These high ruggedness devices are designed for use in high VSWR

industrial, medical, broadcast, aerospace and mobile radio applications. Their

unmatched input and output design supports frequency use from 1.8 to

400 MHz.

1.8–400 MHz, 1800 W CW, 65 V

WIDEBAND

RF POWER LDMOS TRANSISTORS

Typical Performance

Frequency

(MHz)

(V)

(W)



out

Signal Type

(dB)

23.8

24.4

(%)

83.5

75.7

(1,2)

87.5–108

1670 CW

1800 Peak

(3)

230

Pulse

OM--1230--4L

PLASTIC

(100 sec, 20% Duty Cycle)

MRFX1K80N

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

(3)

230

Pulse

> 65:1 at all

14 W Peak

(3 dB

No Device

Degradation

(100 sec, 20% Phase Angles

OM--1230G--4L

PLASTIC

Duty Cycle)

Overdrive)

MRFX1K80GN

1. Measured in 87.5–108 MHz broadband reference circuit (page 5).

2. The values shown are the center band performance numbers across the indicated

frequency range.

3. Measured in 230 MHz narrowband production test fixture (page 11).

Features



Unmatched input and output allowing wide frequency range utilization

Device can be used single--ended or in a push--pull configuration

Qualified up to a maximum of 65 V_DDoperation

Characterized from 30 to 65 V for extended power range

Lower thermal resistance package

High breakdown voltage for enhanced reliability

Suitable for linear application with appropriate biasing

Integrated ESD protection with greater negative gate--source voltage range for

improved Class C operation

Included in NXP product longevity program with assured supply for a minimum

of 15 years after launch

Drain A

Drain B

Gate A

Gate B

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.



Figure 1. Pin Connections

Typical Applications



Industrial, scientific, medical (ISM)

– Laser generation

– Plasma generation

– Particle accelerators

– MRI, RF ablation and skin treatment

– Industrial heating, welding and drying systems

Radio and VHF TV broadcast

Aerospace



– HF communications

– Radar

 2018 NXP B.V.

MRFX1K80N MRFX1K80GN

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...21

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