Datasheet > MRA4007

MRA4007

更新时间： 2024-11-26 14:52:27

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	188K
描述
Rectifier device Common rectifier diodes

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MRA4007 数据手册

MRA4001 - MRA4007

SURFACE MOUNT SILICON RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V

CURRENT: 1.0 A

Features

Diffused junction

For surface mounted applications

Low reverse leakage current

Low forward voltage drop

Highcurrent capability

! Plastic material has UL flammability

SMA(DO-214AC)

classification94V-0

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics _{@ T = 25°C unless otherwise specified}

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Symbol

Characteristic

MRA4001 MRA4002 MRA4003 MRA4004 MRA4005 MRA4006 MRA4007 Unit

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

Maximum Average Forward

100

1000

I(AV)

1.0

Rectified Current

@TL=100 ℃

Peak Forward Surge Current

8.3ms Single Half Sine-Wave

Super Imposed On Rated Load (JEDEC Method)

IFSM

1.1

Maximum Forward Voltage at 1.0A DC

5.0

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@TJ=25℃

100

@TJ=100℃

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

Storage Temperature Range

R JC

℃/W

℃

-55 to +125

TSTG

℃

Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

NOTES:1.

2.Thermal resistance junction to lead.

1 of 2

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