Datasheet > MRA4007T3

MRA4007T3

更新时间： 2024-11-26 22:29:55

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管光电二极管
页数	文件大小	规格书
2页	73K
描述
Chip Silicon Rectifier - Glass passivated type

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中文翻译

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数据手册

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MRA4007T3 数据手册

Chip Silicon Rectifier

Formosa MS

MRA4001T3 THRU MRA4007T3

Glass passivated type

Features

SMA-L

Plastic package has Underwriters Laboratory

FlammabilityClassification 94V-O Utilizing Flame

RetardantEpoxy Molding Compound.

0.205(5.2)

0.189(4.8)

0.012(0.3) Typ.

For surface mounted applications.

0.110(2.8)

0.094(2.4)

Exceeds environmental standards of MIL-S-19500 /

228

0.181(4.6)

0.165(4.2)

Low leakage current.

0.075(1.9)

0.067(1.7)

0.040(1.0) Typ.

0.040 (1.0) Typ.

Mechanical data

Dimensions in inches and (millimeters)

Case : Molded plastic, JEDECDO-214AC

Terminals : Solder plated, solderable per MIL-STD-750,

Method 2026

Polarity : Indicated by c athode band

Mounting Position : Any

Weight : 0.0015 ounce, 0.05 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

I_O

MIN.

TYP.

MAX.

1.0

UNIT

Forward rectified current

See Fig.2

8.3ms single half sine-wave superimposed on

rate load (JEDEC methode)

Forward surge current

I_FSM

V_R= V_RRMT_A= 25 C

5.0

Reverse current

I_R

V_R= V_RRMT_A= 100 C

Thermal resistance

Junction to ambient

Rq_JA

C_J

C / w

Diode junction capacitance

Storage temperature

f=1MHz and applied 4vDC reverse voltage

T_STG

-55

+150

Operating

MARKING

V_RRM

V_RMS

V_R

V_F

temperature

SYMBOLS

CODE

( C)

(V)

MRA4001T3

MRA4002T3

MRA4003T3

MRA4004T3

MRA4005T3

MRA4006T3

MRA4007T3

100

200

400

600

800

1000

100

200

400

600

800

1000

140

280

420

560

700

*1 Repetitive peak reverse voltage

*2 RMS voltage

1.1

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage

中文翻译

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