SENSITRON
MR850-MR858
ꢀ
SEMICONDUCTOR
3.0A FAST RECOVERY RECTIFIER
Data Sheet 2728, Rev. -
Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Low Power Loss
Fast Recovery Time
High Surge Current Capability
A
B
A
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C
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D
Mechanical Data
DO-201AD
Dim Min Max
Min
Max
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Case: Molded Plastic
A
B
25.4
—
1.000
—
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
8.50 9.50 0.335 0.374
1.20 1.30 0.047 0.051
5.0 5.60 0.197 0.220
C
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D
All
In mm
In inch
Mounting Position: Any
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Weight: 0.21 grams (approx.)
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Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
MR850 MR851 MR852 MR854 MR856 MR858
Unit
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Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
200
140
400
280
600
420
800
560
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TL = 75°C
3.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
I FSM
150
A
Forward Voltage
@I F = 3.0A
VFM
1.25
100
1.30
150
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
10
200
IRM
µA
Reverse Recovery Time (Note 1)
trr
Cj
nS
pF
°C
Typical Junction Capacitance (Note 2)
80
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, I = 0.25A,
rr
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
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