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MR752FR-BP PDF预览

MR752FR-BP

更新时间: 2024-11-14 16:47:07
品牌 Logo 应用领域
美微科 - MCC 功效二极管
页数 文件大小 规格书
3页 106K
描述
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, LEADED BUTTON, 2 PIN

MR752FR-BP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEADED BUTTON, 2 PIN针数:2
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
应用:EFFICIENCY外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-XALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:300 A元件数量:1
相数:1端子数量:2
最大输出电流:6 A封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.15 µs
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MR752FR-BP 数据手册

 浏览型号MR752FR-BP的Datasheet PDF文件第2页浏览型号MR752FR-BP的Datasheet PDF文件第3页 
MR750FR  
THRU  
MR7510FR  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
6 Amp Fast Recovery  
Rectifier  
·
·
·
·
·
Low Cost  
Low Leakage  
Low Forward Voltage Drop  
High Current Capability  
50 to 1000 Volts  
Fast Switching Speed For High Efficiency  
Maximum Ratings  
LEADED BUTTON  
·
·
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
A
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
MR750FR  
MR751FR  
MR752FR  
MR754FR  
MR756FR  
MR758FR  
MR7510FR  
---  
---  
---  
---  
---  
---  
---  
35V  
70V  
100V  
200V  
400V  
600V  
800V  
1000V  
100V  
D
40V  
200V  
280V  
420V  
560V  
700V  
400V  
600V  
800V  
1000V  
B
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
6 A  
TA = 55°C  
K
Peak Forward Surge  
Current  
IFSM  
300A  
8.3ms, half sine  
Maximum  
IFM = 6.0A;  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum Reverse  
Recovery Time  
MR750-754  
VF  
IR  
1.3V  
TA = 25°C  
10mA  
150mA TA = 55°C  
TA = 25°C  
DIMENSIONS  
INCHES  
MIN  
.332  
.234  
.050  
MM  
MIN  
8.43  
5.94  
DIM  
A
B
C
D
MAX  
.342  
.246  
MAX  
8.69  
6.25  
1.35  
25.65  
NOTE  
2PL  
.053  
1.27  
.990  
1.010  
25.15  
Trr  
CJ  
150ns IF=0.5A, IR=1.0A,  
250ns Irr=0.25A  
500ns  
150pF Measured at  
1.0MHz, VR=4.0V  
MR756  
MR758-7510  
Typical Junction  
Capacitance  
*Pulse Test: Pulse Width 300msec, Duty Cycle 1%  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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