是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | DO-214AB | 包装说明: | R-PDSO-C2 |
针数: | 2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.34 | 最大击穿电压: | 47.3 V |
最小击穿电压: | 38.7 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AB | JESD-30 代码: | R-PDSO-C2 |
JESD-609代码: | e3 | 最大非重复峰值反向功率耗散: | 1500 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性: | BIDIRECTIONAL | 最大功率耗散: | 5 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 34 V |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | MATTE TIN | 端子形式: | C BEND |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MQSMCJ6055A | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6055AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 40V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6055E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 38V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6056A | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6056AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 43V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6056E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 41V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6057 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6057A | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 47V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6057AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 47V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
MQSMCJ6058A | MICROSEMI |
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Trans Voltage Suppressor Diode, 1500W, 53V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |