5秒后页面跳转
捷配首页

Datasheet > MQSMCJ6061E3
MQSMCJ6061E3 PDF预览

MQSMCJ6061E3

更新时间： 2024-11-29 13:18:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
3页 388K
描述
Trans Voltage Suppressor Diode, 1500W, 66V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AB, PLASTIC PACKAGE-2

阅读下载

中文翻译

获取价格

MQSMCJ6061E3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-214AB包装说明：R-PDSO-C2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.76Is Samacsys：N
最大击穿电压：90.2 V最小击穿电压：73.8 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码：DO-214AB
JESD-30 代码：R-PDSO-C2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：66 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MQSMCJ6061E3 数据手册

 浏览型号MQSMCJ6061E3的Datasheet PDF文件第2页浏览型号MQSMCJ6061E3的Datasheet PDF文件第3页 
SMCG6036 thru SMCG6072A  
and SMCJ6036 thru SMCJ6072A  
Bidirectional Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These surface mount Transient Voltage Suppressors (TVSs) are used for protecting  
sensitive components requiring low clamping voltage levels. They are rated at high  
current impulses typically generated by inductive switching transients. Other benefits  
are achieved with low-profile surface mount J-bend or Gull-wing terminals for stress-  
relief and lower weight. Its low-flat profile provides easier insertion or automatic  
handling benefits compared to other MELF style packages. Options for screening  
similar to JAN, JANTX, JANTXV, and JANS also exist by using MQ, MX, MV or MSP  
prefixes respectively for part numbers and high reliability screening in accordance  
with MIL-PRF-19500/507.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
Working Standoff Voltages: 5.5 volts to 185 volts  
Metallurgically bonded  
Reliability data per JESD22-A108, JESD22-A104,  
JESD22-A113-B, JESD22-A101-B, and JESD22-A102  
Thermally efficient surface mount with J-bends or  
Gull wings termination for stress relief (flat handling  
surface and easier placement)  
Options for screening in accordance with MIL-PRF-  
19500/507 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes to  
part numbers respectively. For example, designate a  
MXSMCJ6036A for a JANTX screen.  
•
•
For high reliability transient voltage suppression in  
low profile surface mount locations requiring easy  
placement and strain relief  
Light weight for airborne or satellite applications  
•
• Superior surge quality to protect from ESD and EFT  
transients per IEC61000-4-2 and -4-4  
•
•
Lightning surge protection per IEC61000-4-5 for Class  
1 and 2 with source impedance of 42 Ohms as well as  
Class 3 and 4 selectively at lower voltages (VWM) and  
higher surge current (IPP) ratings herein  
•
Protects sensitive components such as ICs, CMOS,  
Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Operating temperature: -55°C to +150°C  
• Molded epoxy package meets UL94V-0  
• Terminals: solderable per MIL-STD-750  
Method 2026. (max 260 °C for 10 sec.)  
• Body marked with P/N without SMCJ or SMCG letters  
(ie. 6036A, 6039, 6053, 6072A, etc.)  
Storage temperature: -55°C to +150°C  
1500 Watts of Peak Pulse Power at 10/1000 µs as  
shown in Figure 3 (see Figure 1 for other tP values)  
Thermal resistance, RθJL = 20°C/W  
Impulse repetition rate (duty factor): 0.01%  
5.0 Watt steady-state maximum power at TL =25°C  
tclamping (0V to V(BR) min): less than 5 ns  
•
•
•
•
• No polarity band is shown on these bi-directional types  
• Weight: 0.25 grams (approximate)  
• Tape & Reel packaging per EIA-481  
(2500 units/reel)  
ELECTRICAL CHARACTERISTICS @ 25oC (Test Both Polarities)  
Maximum  
Rated  
Stand-off  
Voltage  
(Note 1)  
VWM  
Volts  
5.5  
Clamping  
Voltage  
@ IPP  
(10/1000 µs)  
VC  
Maximum  
Standby  
Current  
@ VWM  
ID  
Maximum  
Peak Pulse  
Current  
(Fig. 2)  
IPP  
Maximum  
Temperature  
Coefficient  
of V(BR)  
αV(BR)  
%/oC  
MICROSEMI  
Part Number  
MICROSEMI  
Part Number  
Breakdown  
Voltage*  
Modified  
“G”  
Modified  
“J”  
V(BR)  
@
I(BR)  
mA  
10  
10  
10  
10  
10  
10  
1
Bend Lead  
SMCG6036  
SMCG6036A  
SMCG6037  
SMCG6037A  
SMCG6038  
SMCG6038A  
SMCG6039  
SMCG6039A  
SMCG6040  
SMCG6040A  
SMCG6041  
SMCG6041A  
Bend Lead  
SMCJ6036  
SMCJ6036A  
SMCJ6037  
SMCJ6037A  
SMCJ6038  
SMCJ6038A  
SMCJ6039  
SMCJ6039A  
SMCJ6040  
SMCJ6040A  
SMCJ6041  
SMCJ6041A  
Volts  
Volts  
11.7  
µA  
A
6.75 - 8.25  
7.13 - 7.88  
7.38 - 9.02  
7.79 - 8.61  
8.19 - 10.00  
8.65 - 9.55  
1000  
1000  
500  
128  
.061  
6.0  
11.3  
132  
.061  
6.5  
12.5  
120  
.065  
7.0  
12.1  
500  
124  
.065  
7.0  
13.8  
200  
109  
.068  
7.5  
13.4  
200  
112  
.068  
8.0  
9.0  
9.5  
9.9  
-
-
-
11.0  
10.5  
12.1  
15.0  
50  
100  
.073  
8.5  
1
14.5  
50  
103  
.073  
8.5  
1
16.2  
10  
93  
.075  
9.0  
10.5 - 11.6  
10.8 - 13.2  
11.4 - 12.6  
1
15.6  
10  
96  
.075  
9.0  
1
17.3  
5
87  
.078  
10.0  
1
16.7  
5
90  
.078  
Copyright 2003  
Microsemi  
Page 1  
01-24-2003 REV A  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
123

中文翻译

下载PDF

与MQSMCJ6061E3相关器件

型号 品牌 获取价格 描述 数据表
MQSMCJ6062A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6062AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 75V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6062E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 73V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6063AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 82V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6063E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 81V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6064A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 94V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6064AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 94V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6064E3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 90V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6065 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 95V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQSMCJ6065AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-

与MQSMCJ6061E3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证