5秒后页面跳转
捷配首页

Datasheet > MQSMBGP6KE160CTR
MQSMBGP6KE160CTR PDF预览

MQSMBGP6KE160CTR

更新时间： 2024-11-06 19:20:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 560K
描述
Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN

阅读下载

中文翻译

获取价格

MQSMBGP6KE160CTR 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：DO-215AA
包装说明：R-PDSO-G2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.66
Is Samacsys：N最大击穿电压：176 V
最小击穿电压：144 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-215AAJESD-30 代码：R-PDSO-G2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：235极性：BIDIRECTIONAL
最大功率耗散：1.38 W认证状态：Not Qualified
参考标准：MIL-19500最大重复峰值反向电压：130 V
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：20
Base Number Matches：1

MQSMBGP6KE160CTR 数据手册

 浏览型号MQSMBGP6KE160CTR的Datasheet PDF文件第2页浏览型号MQSMBGP6KE160CTR的Datasheet PDF文件第3页浏览型号MQSMBGP6KE160CTR的Datasheet PDF文件第4页 
SMBJP6KE6.8 thru SMBJP6KE200CA and  
SMBGP6KE6.8 thru SMBGP6KE200CA  
600 Watt TRANSIENT VOLTAGE  
SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This SMBJP6KE and SMBGP6KE series is an economical surface mount  
version of the popular P6KE axial-leaded series of 600 W Transient Voltage  
Suppressors (TVSs). It is available in both unidirectional and bi-directional  
configurations for protecting voltage-sensitive components from destruction  
or degradation. Response time of clamping action is virtually instantaneous.  
As a result, they may also be used effectively for protection from ESD or EFT  
per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments  
and induced RF. They can also be used for protecting other sensitive  
components from secondary lightning effects per IEC61000-4-5 and class  
levels defined herein. Microsemi also offers numerous other TVS products to  
NOTE: All SMB series are  
equivalent to prior SMS package  
identifications.  
meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Economical TVS series for surface mount  
Available in both unidirectional and bidirectional  
(add C or CA suffix to part number for bidirectional)  
•
Suppresses transients up to 600 watts @ 10/1000  
µs (see Figure 1)  
•
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
•
•
•
Selections for 6.8 to 200 volts breakdown (VBR  
Fast response  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers.  
)
•
•
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
•
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: SMBJ(G)P6KE6.8 to 130A or CA  
Class 2: SMBJ(G)P6KE6.8 to 68A or CA  
Class 3: SMBJ(G)P6KE6.8 to 36A or CA  
Class 4: SMBJ(G)P6KE6.8 to 18A or CA  
•
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
•
•
Axial-lead (thru-hole) equivalents available as P6KE6.8  
Class 1: SMBJ(G)P6KE6.8 to 43A or CA  
Class 2: SMBJ(G)P6KE6.8 to 22A or CA  
to P6KE200CA (consult factory for other options)  
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Peak Pulse Power dissipation at 25oC: 600 watts at  
•
CASE: Void-free transfer molded thermosetting  
10/1000 µs (also see Fig 1,2, and 3).  
epoxy body meeting UL94V-0  
• Impulse repetition rate (duty factor): 0.01%  
•
•
FINISH: Tin-Lead plated over copper and readily  
solderable per MIL-STD-750, method 2026  
MARKING: Body marked without SMBJ or SMBG  
part number prefix, e.g. P6KE6.8A, P6KE36,  
P6KE200CA, etc.  
• tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
• Operating and Storage temperature: -65oC to +150oC  
• Thermal resistance: 25 ºC/W junction to lead, or 90ºC/W  
junction to ambient when mounted on FR4 PC board  
(1oz Cu) with recommended footprint (see last page)  
•
•
POLARITY: Band denotes cathode. Bidirectional  
not marked  
• Steady-State Power dissipation: 5 watts at TL = 25oC,  
or 1.38 watts at TA = 25ºC when mounted on FR4 PC  
board with recommended footprint  
WEIGHT: 0.1 grams (approximate)  
•
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per  
13 inch reel (add “TR” suffix to part number)  
• Forward Voltage at 25oC: 3.5 Volts maximum @ 50  
Amp peak impulse of 8.3 ms half-sine wave  
(unidirectional only)  
•
See package dimensions on last page  
• Solder temperatures: 260oC for 10 s (maximum)  
Copyright 2004  
6-16-2004 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

下载PDF

与MQSMBGP6KE160CTR相关器件

型号 品牌 获取价格 描述 数据表
MQSMBGP6KE160TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQSMBGP6KE16A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
MQSMBGP6KE16AE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
MQSMBGP6KE16ATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, DO
MQSMBGP6KE16C MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 12.9V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MQSMBGP6KE16CAE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 13.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MQSMBGP6KE16CATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 13.6V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MQSMBGP6KE16CE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 12.9V V(RWM), Bidirectional, 1 Element, Silicon, DO-
MQSMBGP6KE16E3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 12.9V V(RWM), Unidirectional, 1 Element, Silicon, DO
MQSMBGP6KE170A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 145V V(RWM), Unidirectional, 1 Element, Silicon, DO-

与MQSMBGP6KE160CTR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证