Datasheet > MQSMAJ6491C

MQSMAJ6491C

更新时间： 2024-11-24 09:28:55

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
2页	157K
描述
Zener Diode, 5.6V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN

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MQSMAJ6491C 数据手册

SMAJ4460 thru SMAJ4496, e3

and SMAJ6485 thru SMAJ6491, e3

1.5 Watt Zener Diodes

S C O T T S D A L E D I V I S I O N

SURFACE MOUNT

DESCRIPTION

ZENER

This 1.5 watt zener series in a low-profile light-weight plastic surface mount

configuration, with stress-relief J-bend contacts, meets or exceeds the electrical

performance of the 1N4460 thru 1N4496 and 1N6485 thru 1N6491. It also provides

double the overall surge performance by using a larger active die element. This

includes ESD protection per IEC61000-4-2, EFT protection per IEC61000-4-4, and

higher surge levels defined herein. The low-flat profile provides easier insertion or

automatic handling compared to other MELF style packages. Its thermally efficient

design lowers junction temperatures and extends operating temperature range

before derating begins. Power derates to zero at 150°C for these plastic packages.

DO-214BA or AC

(SMAJ)

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Zener voltages: 3.3 volts to 200 volts

Metallurgically bonded

• For high reliability voltage regulation in low profile

surface mount locations requiring easy

placement and strain relief

• Light weight for airborne or satellite applications

• Superior surge quality to protect from ESD and

EFT transients per IEC61000-4-2 and -4-4 and

higher surge levels defined herein

Reliability data per JESD22-A108, JESD22-A104,

JESD22-A113-B, JESD22-A101-B, and JESD22-A102

Thermally efficient surface mount with J-bends for

stress relief (flat handling surface for easier placement)

Options for screening in accordance with MIL-PRF-

19500/406 for JAN, JANTX, and JANTXV are available

by adding MQ, MX, or MV prefixes respectively to part

numbers. For example, designate a MXSMAJ4460 for a

JANTX screen.

•

MECHANICAL AND PACKAGING

• Molded epoxy package meets UL94V-0

• Terminals: Tin-lead or RoHS compliant annealed

matte-Tin plated solderable per MIL-STD-750,

method 2026

• Body marked with P/N without SMAJ letters

(ie. 4460, 4496, 6485, 4460, etc.)

• Polarity is indicated by cathode band

• Weight: 0.064 grams (approximate)

• Tape & Reel packaging per EIA-481-2 with 12

mm tape and 2500 units per reel (13 inch reel)

•

RoHS Compliant devices available by adding “e3” suffix

MAXIMUM RATINGS

•

Operating temperature: -55°C to +150°C

Storage temperature: -55°C to +150°C

1.5 watt steady-state maximum power

Thermal resistance, R_θJL= 15 °C/W

Solder Temperatures: 260ºC for 10 s (maximum)

POWER DERATING – OUTLINE – MOUNTING PAD

DIMENSIONS

MILLIMETERS

INCHES

DIM

MIN

.052

.160

.100

.194

.078

.030

MAX

.103

.180

.110

.216

.115

.060

.005

MIN

1.32

4.06

2.54

4.93

1.98

0.76

MAX

2.62

4.57

2.79

5.49

2.92

1.52

0.13

2.5

2.0

1.5

1.0

DIMENSION A IS WITHIN DO-214BA BUT HIGHER THAN

STANDARD JEDEC OUTLINES..DIMENSION B IS WIDER

THAN BOTH JEDEC OUTLINES FOR LOWER THERMAL

RESISTANCE

0.5

Outline

25 50 75 100 125 150 175 200

T_L, Lead Temperature (ºC) 3/8” from body

Figure 1. Power Derating Curve

Mounting Pad

6-20-07 REV B

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

中文翻译

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与MQSMAJ6491C相关器件

型号	品牌	获取价格	描述	数据表
MQSMAJ6491CE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 2%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ6491D	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 1%, 1.5W, Silicon, Unidirectional, DO-214BA, PLASTIC, SMAJ, 2 PIN
MQSMAJ6491DE3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 1%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ6491E3	MICROSEMI	获取价格	Zener Diode, 5.6V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ64AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ64AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ64ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ64C	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ64CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ64CAE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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