5秒后页面跳转
捷配首页

Datasheet > MQSMAJ6491DE3
MQSMAJ6491DE3 PDF预览

MQSMAJ6491DE3

更新时间： 2024-11-23 18:18:43
品牌 Logo 应用领域
美高森美 - MICROSEMI 测试光电二极管
页数 文件大小 规格书
2页 157K
描述
Zener Diode, 5.6V V(Z), 1%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLASTIC, SMAJ, 2 PIN

阅读下载

中文翻译

获取价格

MQSMAJ6491DE3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-214BA包装说明：R-PDSO-C2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.84Is Samacsys：N
其他特性：HIGH RELIABILITY, METALLURGICALLY BONDED配置：SINGLE
二极管元件材料：SILICON二极管类型：ZENER DIODE
JEDEC-95代码：DO-214BAJESD-30 代码：R-PDSO-C2
JESD-609代码：e3元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.5 W认证状态：Not Qualified
标称参考电压：5.6 V表面贴装：YES
技术：ZENER端子面层：MATTE TIN
端子形式：C BEND端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED最大电压容差：1%
工作测试电流：45 mABase Number Matches：1

MQSMAJ6491DE3 数据手册

 浏览型号MQSMAJ6491DE3的Datasheet PDF文件第2页 
SMAJ4460 thru SMAJ4496, e3  
and SMAJ6485 thru SMAJ6491, e3  
1.5 Watt Zener Diodes  
S C O T T S D A L E D I V I S I O N  
SURFACE MOUNT  
DESCRIPTION  
ZENER  
This 1.5 watt zener series in a low-profile light-weight plastic surface mount  
configuration, with stress-relief J-bend contacts, meets or exceeds the electrical  
performance of the 1N4460 thru 1N4496 and 1N6485 thru 1N6491. It also provides  
double the overall surge performance by using a larger active die element. This  
includes ESD protection per IEC61000-4-2, EFT protection per IEC61000-4-4, and  
higher surge levels defined herein. The low-flat profile provides easier insertion or  
automatic handling compared to other MELF style packages. Its thermally efficient  
design lowers junction temperatures and extends operating temperature range  
before derating begins. Power derates to zero at 150°C for these plastic packages.  
DO-214BA or AC  
(SMAJ)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
Zener voltages: 3.3 volts to 200 volts  
Metallurgically bonded  
• For high reliability voltage regulation in low profile  
surface mount locations requiring easy  
placement and strain relief  
• Light weight for airborne or satellite applications  
• Superior surge quality to protect from ESD and  
EFT transients per IEC61000-4-2 and -4-4 and  
higher surge levels defined herein  
Reliability data per JESD22-A108, JESD22-A104,  
JESD22-A113-B, JESD22-A101-B, and JESD22-A102  
Thermally efficient surface mount with J-bends for  
stress relief (flat handling surface for easier placement)  
Options for screening in accordance with MIL-PRF-  
19500/406 for JAN, JANTX, and JANTXV are available  
by adding MQ, MX, or MV prefixes respectively to part  
numbers. For example, designate a MXSMAJ4460 for a  
JANTX screen.  
•
•
MECHANICAL AND PACKAGING  
• Molded epoxy package meets UL94V-0  
• Terminals: Tin-lead or RoHS compliant annealed  
matte-Tin plated solderable per MIL-STD-750,  
method 2026  
• Body marked with P/N without SMAJ letters  
(ie. 4460, 4496, 6485, 4460, etc.)  
• Polarity is indicated by cathode band  
• Weight: 0.064 grams (approximate)  
• Tape & Reel packaging per EIA-481-2 with 12  
mm tape and 2500 units per reel (13 inch reel)  
•
RoHS Compliant devices available by adding “e3” suffix  
MAXIMUM RATINGS  
•
•
•
•
•
Operating temperature: -55°C to +150°C  
Storage temperature: -55°C to +150°C  
1.5 watt steady-state maximum power  
Thermal resistance, RθJL = 15 °C/W  
Solder Temperatures: 260ºC for 10 s (maximum)  
POWER DERATING – OUTLINE – MOUNTING PAD  
DIMENSIONS  
MILLIMETERS  
INCHES  
DIM  
MIN  
.052  
.160  
.100  
.194  
.078  
.030  
--  
MAX  
.103  
.180  
.110  
.216  
.115  
.060  
.005  
MIN  
1.32  
4.06  
2.54  
4.93  
1.98  
0.76  
--  
MAX  
2.62  
4.57  
2.79  
5.49  
2.92  
1.52  
0.13  
2.5  
2.0  
1.5  
1.0  
A
B
C
D
E
F
G
DIMENSION A IS WITHIN DO-214BA BUT HIGHER THAN  
STANDARD JEDEC OUTLINES..DIMENSION B IS WIDER  
THAN BOTH JEDEC OUTLINES FOR LOWER THERMAL  
RESISTANCE  
0.5  
Outline  
25 50 75 100 125 150 175 200  
TL, Lead Temperature (ºC) 3/8” from body  
Figure 1. Power Derating Curve  
Mounting Pad  
Copyright © 2007  
6-20-07 REV B  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12

中文翻译

下载PDF

与MQSMAJ6491DE3相关器件

型号 品牌 获取价格 描述 数据表
MQSMAJ6491E3 MICROSEMI

获取价格

 		Zener Diode, 5.6V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-214BA, ROHS COMPLIANT, PLAST
MQSMAJ64AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ64AE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ64ATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MQSMAJ64C MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ64CAE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ64CAE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ64CATR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ64CE3TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 64V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MQSMAJ7.0A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 500W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

与MQSMAJ6491DE3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证