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MQP4KE130AE3TR PDF预览

MQP4KE130AE3TR

更新时间： 2024-11-09 14:01:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 222K
描述
Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

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MQP4KE130AE3TR 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-41包装说明：PLASTIC, DO-41, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.57Is Samacsys：N
最大击穿电压：137 V最小击穿电压：124 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-204ALJESD-30 代码：O-PALF-W2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：400 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.13 W认证状态：Not Qualified
最大重复峰值反向电压：111 V表面贴装：NO
技术：AVALANCHE端子面层：MATTE TIN
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MQP4KE130AE3TR 数据手册

 浏览型号MQP4KE130AE3TR的Datasheet PDF文件第2页浏览型号MQP4KE130AE3TR的Datasheet PDF文件第3页浏览型号MQP4KE130AE3TR的Datasheet PDF文件第4页 
P4KE6.8 thru P4KE400CA, e3  
400 Watt Transient Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This 400 W Transient Voltage Suppressor (TVS) series is an economical  
molded axial-leaded package to protect voltage-sensitive components from  
destructive or partial degradation. They are available in both unidirectional  
or bi-directional configurations as well as RoHS Compliant (annealed  
matte-Tin finish) with an e3 suffix added to the part number. They have a  
peak pulse power rating of 400 watts for a 10/1000 µs as depicted in  
Figures 1 and 2. The nominal breakdown voltages (VBR) in this series  
extend from 6.8 to 400 volts. Microsemi also offers a broad spectrum of  
additional TVSs to meet your needs.  
DO-41  
(DO-204AL)  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Economical series for thru-hole mounting  
•
Suppresses transients up to 400 watts @ 10/1000 μs  
(see Figure 1)  
Available in both unidirectional and bi-directional (add C  
or CA suffix to part number for bidirectional)  
•
Protects sensitive components such as IC’s, CMOS,  
Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
•
•
•
Voltages from 6.8 to 400 V Breakdown (VBR  
)
•
•
Protection from switching transients & induced RF  
Fast Response  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
•
•
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: P4KE5.0 to P4KE91A or CA  
Class 2: P4KE5.0 to P4KE47A or CA  
Class 3: P4KE5.0 to P4KE24A or CA  
Class 4: P4KE5.0 to P4KE12A or CA  
•
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, or JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
•
•
RoHS Compliant devices avaialbe by adding “e3” suffix  
Class 1: P4KE5.0 to P4KE30A or CA  
Class 2: P4KE5.0 to P4KE15A or CA  
Surface mount equivalents available as SMAJP4KE6.8  
to SMAJP4KE400CA  
•
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
Operating and Storage Temperature: -65°C to +150°C  
Peak Pulse Power: 400 Watts at 10/1000 μs (see Figure  
1, 2 and 3 for tW, waveform and derating effects)  
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
•
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-  
750, method 2026  
•
•
Impulse repetition rate (duty factor): 0.01%  
Thermal Resistance: 50°C/W junction to leads @ 3/8  
inch (10 mm) from body, or 110°C/W junction to ambient  
when mounted on FR4 PC board with 4 mm2 copper  
pads (1oz) and track width 1 mm, length 25 mm  
•
•
MARKING: Body marked with part number  
POLARITY: Band denotes cathode. Bidirectional  
not marked  
•
•
WEIGHT: 0.3 grams (approximate)  
•
Steady-State Power: 2.5 Watts @ TL=25°C at 3/8 inch  
(10 mm) from body, or 1.13 W at TA = 25ºC on FR4 PC  
board described for thermal resistance  
TAPE & REEL option: Standard per EIA-296 (add  
“TR” suffix to part number)  
•
•
Forward Voltage at 25°C: 3.5 V @ 30 A with 8.3 ms half-  
•
See package dimensions on last page  
sine wave (unidirectional only)  
Solder temperatures: 260 °C for 10 s (maximum)  
Copyright © 2005  
8-04-2005 REV C  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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与MQP4KE130AE3TR相关器件

型号 品牌 获取价格 描述 数据表
MQP4KE130ATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Unidirectional, 1 Element, Silicon, DO-
MQP4KE130C MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 105V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CA MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CAE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CAE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CATR MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 111V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 105V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 105V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130CTR MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 105V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
MQP4KE130E3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 400W, 105V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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