Datasheet > MPSA64-S00Z

MPSA64-S00Z

更新时间： 2024-09-23 20:44:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
14页	881K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册

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MPSA64-S00Z 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.5 A
配置：	DARLINGTON	最小直流电流增益 (hFE)：	10000
JESD-609代码：	e0	最高工作温度：	150 °C
极性/信道类型：	PNP	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
标称过渡频率 (fT)：	125 MHz	Base Number Matches：	1

MPSA64-S00Z 数据手册

MPSA64

MMBTA64

PZTA64

TO-92

SOT-23

Mark: 2V

SOT-223

PNP Darlington Transistor

This device is designed for applications requiring extremely high

current gain at currents to 800 mA. Sourced from Process 61.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CES

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.2

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

MPSA64

*MMBTA64

**PZTA64

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

1,000

8.0

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

125

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².

1997 Fairchild Semiconductor Corporation

12 3 4 5 6 7...14

中文翻译

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