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MPSA56

更新时间: 2024-11-04 04:39:15
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友顺 - UTC 晶体放大器晶体管
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5页 187K
描述
AMPLIFIER TRANSISTOR

MPSA56 数据手册

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UTC MPSA06/56  
AMPLIFIER TRANSISTOR  
NPN MPSA06  
PNP MPSA56  
FEATURES  
*Collector-Emitter Voltage: VCEO=80V  
*Collector Dissipation: PD=625mW  
1
TO-92  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)  
PARAMETER  
Collector-base voltage  
SYMBOL  
VCBO  
VCEO  
VEBO  
Ic  
RATING  
UNIT  
V
V
V
mA  
mW  
mW/°C  
mW  
mW/°C  
°C  
80  
80  
4
500  
625  
5
Collector-emitter voltage  
Emitter-base voltage  
Collector current - Continuous  
Total device dissipation, @TA=25°C  
Derate above 25°C  
PD  
Total device dissipation, @TC=25°C  
Derate above 25°C  
PD  
1500  
12  
Junction Temperature  
Storage Temperature  
Tj  
TSTG  
-55 ~ +150  
-55 ~ +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
Thermal resistance, junction to ambient  
Thermal resistance, junction to case  
SYMBOL  
RθJA (note)  
RθJC  
MAX  
200  
83.3  
UNIT  
°C/W  
°C/W  
Note: RθJA is measured with the device soldered into a typical printed circuit board.  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)  
PARAMETER  
OFF CHARACTERISTICS  
Collector-emitter breakdown voltage  
(note 1)  
SYMBOL  
TEST CONDITIONS  
MIN TYP MAX UNIT  
V(BR)CEO  
IC=1.0mA, IB=0  
80  
4
V
Emitter-base breakdown voltage  
Collector cutoff current  
Collector cutoff current  
V(BR)EBO  
ICES  
ICBO  
IE=100µA, Ic=0  
VCE=60V, IB=0  
VCB=80V, IE=0  
V
µA  
µA  
0.1  
0.1  
1
UTC UNISONIC TECHNOLOGIES CO., LTD.  
QW-R201-035,A  

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