Datasheet > MPSA55_11

MPSA55_11

更新时间： 2024-11-03 10:48:47

品牌	Logo	应用领域
美微科 - MCC		晶体放大器晶体管
页数	文件大小	规格书
2页	211K
描述
PNP Silicon Amplifier Transistor

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中文翻译

获取价格

数据手册

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MPSA55_11 数据手册

M C C

MPSA55

MPSA56

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Capable of 1.5Watts of Power Dissipation.

Collector-current 500mA

PNP Silicon

Amplifier Transistor

Collector-base Voltage 80V

Operating and storage junction temperature range: -55^OC to +150^OC

Marking:MPSA55,MPSA56

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

TO-92

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Rating

4.0

500

625

5.0

1.5

Unit

Collector Current Continuous

P_D

Total Device Dissipation @T =25^OC

Derate above 25^OC

mW/ ^OC

P_D

Total Device Dissipation @T =25^OC

Derate above 25^OC

Junction Temperature

Storage Temperature

mW/ ^OC

T_J

T_STG

-55 to +150

^OC

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

Collector-Emitter Breakdown Voltage⁽¹⁾

(I =1.0mAdc, I_B=0)

MPSA55

MPSA56

4.0

Vdc

V_(BR)EBO

I_CES

Emitter-Base Breakdown Voltage

(I =100uAdc, I_C=0)

Collector Cutoff Current

0.1

uAdc

(V_CE=60Vdc, I =0)

Collector Cutoff Current

CBO

(V_CB=60Vdc, I =0)

MPSA55

MPSA56

0.1

uAdc

(V_CB=80Vdc, I =0)

ON CHARACTERISTICS ⁽¹⁾

h_FE(1)

DC Current Gain

(I =10mAdc, V_CE=1.0Vdc)

DC Current Gain

(I =100mAdc, V_CE=1.0Vdc)

100

h_FE(2)

DIMENSIONS

V_CE(sat)

V_BE(on)

Collector-Emitter Saturation Voltage

INCHES

(I =100mAdc, I_B=10mAdc)

0.25

1.2

Vdc

DIM

MIN

.170

.550

.010

.130

.096

MAX

.190

MIN

4.33

4.30

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

Base-Emitter Saturation Voltage

(I =100mAdc, V_CE=1.0Vdc)

.190

.590

.020

.160

.104

13.97

0.36

3.30

2.44

SMALL-SIGNAL CHARACTERISTICS

f_T

Current-Gain – Bandwidth Product⁽³⁾

(I =100mAdc, V_CE=1.0Vdc,

f=100MHz)

MPSA55

MPSA56

MHz

1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%

f_Tis defined as the frequency at which |h_fe| extrapolates to unity.

www.mccsemi.com

1 of 2

Revision: A

2011/01/01

中文翻译

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与MPSA55_11相关器件

型号	品牌	获取价格	描述	数据表
MPSA55_99	KEC	获取价格	EPITAXIAL PLANAR PNP TRANSISTOR
MPSA55-18FLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18F,
MPSA55-18R	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R,
MPSA55-18RLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-18R,
MPSA55-5F	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5F, 3
MPSA55-5T1	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92-5T1,
MPSA55-AP	MCC	获取价格	PNP Silicon Amplifier Transistor
MPSA55APM	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
MPSA55APMLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
MPSA55APMTIN/LEAD	CENTRAL	获取价格	Transistor

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