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MPSA12RLRA PDF预览

MPSA12RLRA

更新时间: 2024-02-23 14:08:59
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管达林顿晶体管
页数 文件大小 规格书
3页 48K
描述
Darlington Transistors NPN Silicon

MPSA12RLRA 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:,Reach Compliance Code:not_compliant
风险等级:5.76JESD-609代码:e0
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin/Lead (Sn/Pb)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MPSA12RLRA 数据手册

 浏览型号MPSA12RLRA的Datasheet PDF文件第1页浏览型号MPSA12RLRA的Datasheet PDF文件第3页 
MPSA12  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Max  
Unit  
CollectorEmitter Breakdown Voltage  
V
20  
Vdc  
nAdc  
nAdc  
(BR)CES  
(I = 100 mAdc, I = 0)  
C
B
Collector Cutoff Current  
I
100  
100  
CBO  
(V = 15 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current  
I
EBO  
(V = 12 Vdc, I = 0)  
EB  
C
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 10 mAdc, V = 5.0 Vdc)  
C
20,000  
CE  
CollectorEmitter Saturation Voltage  
V
1.0  
Vdc  
Vdc  
CE(sat)  
(I = 10 mAdc, I = 0.01 mAdc)  
C
B
BaseEmitter On Voltage  
V
1.4  
BE(on)  
(I = 10 mAdc, V = 5.0 Vdc)  
C
CE  
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
SINGLE PULSE  
0.05  
0.1  
0.1  
0.07  
SINGLE PULSE  
0.05  
0.03  
0.02  
Z
Z
= r(t) R ꢁT  
− T = P  
C
Z
q
(pk) JC(t)  
q
q
q
JC(t)  
JC  
J(pk)  
= r(t) R ꢁT  
− T = P Z  
A (pk) JA(t)  
q
JA  
q
JA(t)  
J(pk)  
0.01  
0.1  
0.2  
0.5  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
500  
1.0ꢀk  
2.0ꢀk  
5.0ꢀk 10ꢀk  
t, TIME (ms)  
Figure 2. Thermal Response  
http://onsemi.com  
2

MPSA12RLRA 替代型号

型号 品牌 替代类型 描述 数据表
BC33725TA ONSEMI

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