5秒后页面跳转
MPS6531J18Z PDF预览

MPS6531J18Z

更新时间: 2024-11-26 14:43:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
7页 292K
描述
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN

MPS6531J18Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.65
最大集电极电流 (IC):1 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

MPS6531J18Z 数据手册

 浏览型号MPS6531J18Z的Datasheet PDF文件第2页浏览型号MPS6531J18Z的Datasheet PDF文件第3页浏览型号MPS6531J18Z的Datasheet PDF文件第4页浏览型号MPS6531J18Z的Datasheet PDF文件第5页浏览型号MPS6531J18Z的Datasheet PDF文件第6页浏览型号MPS6531J18Z的Datasheet PDF文件第7页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MPS6531  
TO-92  
C
B
E
NPN General Purpose Amplifier  
This device is designed for use as a medium power amplifier  
and switch requiring collector currents to 500 mA. Sourced  
from Process 19. See PN2222A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
40  
60  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MPS6531  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
Rθ  
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
°C/W  
JA  
1997 Fairchild Semiconductor Corporation  

与MPS6531J18Z相关器件

型号 品牌 获取价格 描述 数据表
MPS6531-T/R NXP

获取价格

TRANSISTOR 600 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3, BIP G
MPS6531T93 ROHM

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MPS6531TRA CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6531TRB CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6531TRC CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6531TRE CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6531TRELEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6531TRG CENTRAL

获取价格

Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
MPS6532 ALLEGRO

获取价格

Small Signal Bipolar Transistor, 0.6A I(C), NPN,
MPS6532 TI

获取价格

TRANSISTOR,BJT,NPN,30V V(BR)CEO,600MA I(C),TO-92