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MPS6532LEADFREE PDF预览

MPS6532LEADFREE

更新时间: 2024-11-08 21:21:03
品牌 Logo 应用领域
CENTRAL 开关晶体管
页数 文件大小 规格书
2页 322K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN

MPS6532LEADFREE 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-92
包装说明:TO-92, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.16最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):30JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

MPS6532LEADFREE 数据手册

 浏览型号MPS6532LEADFREE的Datasheet PDF文件第2页 
MPS6530  
MPS6531  
MPS6532  
www.centralsemi.com  
DESCRIPTION:  
NPN SILICON TRANSISTORS  
The CENTRAL SEMICONDUCTOR MPS6530 series  
types are NPN silicon transistors designed for general  
purpose amplifier applications. The PNP complementary  
types are MPS6533, MPS6534, MPS6535 respectively.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
Collector-Base Voltage  
SYMBOL MPS6530 MPS6531 MPS6532  
UNITS  
V
A
V
V
V
60  
60  
50  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
40  
40  
30  
V
V
5.0  
Continuous Collector Current  
Power Dissipation  
I
600  
mA  
mW  
°C  
C
P
625  
D
Operating and Storage Junction Temperature  
T , T  
-65 to +150  
J
stg  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
MPS6530  
MPS6531  
MIN MAX  
MPS6532  
MIN MAX  
SYMBOL  
TEST CONDITIONS  
MIN MAX  
UNITS  
nA  
I
I
I
I
V
V
V
V
=40V  
-
50  
-
50  
-
-
CBO  
CBO  
CBO  
CBO  
CB  
CB  
CB  
CB  
=40V, T =60°C  
A
=30V  
-
2.0  
-
2.0  
-
-
100  
5.0  
-
μA  
nA  
μA  
V
-
-
-
-
-
=30V, T =60°C  
-
-
-
-
-
-
-
A
BV  
BV  
BV  
I =10μA  
60  
60  
50  
CBO  
CEO  
EBO  
C
I =10mA  
40  
-
40  
-
30  
-
V
C
I =10μA  
5.0  
-
5.0  
-
5.0  
-
V
E
V
V
I =100mA, I =10mA  
-
0.5  
1.0  
-
-
0.3  
1.0  
-
-
0.5  
1.2  
-
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =100mA, I =10mA  
-
-
-
V
C
B
h
h
h
V
=1.0V, I =10mA  
30  
60  
-
CE  
CE  
CE  
CB  
CE  
C
V
V
V
V
=1.0V, I =100mA  
40  
120  
-
90  
270  
-
30  
-
FE  
C
=10V, I =500mA  
25  
50  
-
-
FE  
C
C
=10V, I =0, f=100kHz  
-
5.0  
-
5.0  
-
5.0  
pF  
ob  
E
f
=10V, I =50mA  
300(TYP)  
300(TYP)  
300(TYP)  
MHz  
T
C
R1 (29-November 2012)  

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