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MPS6513-D26Z PDF预览

MPS6513-D26Z

更新时间： 2024-11-10 19:55:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
2页 126K
描述
Transistor

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中文翻译

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MPS6513-D26Z 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.84
最大集电极电流 (IC)：0.2 A配置：Single
最小直流电流增益 (hFE)：90JESD-609代码：e3
最高工作温度：150 °C极性/信道类型：NPN
最大功率耗散 (Abs)：0.625 W子类别：Other Transistors
表面贴装：NO端子面层：Matte Tin (Sn)
Base Number Matches：1

MPS6513-D26Z 数据手册

 浏览型号MPS6513-D26Z的Datasheet PDF文件第2页 
September 2007  
MPS6513  
NPN General Purpose Amplifier  
•
•
•
This device is designed as a general purpose amplifier and switch.  
The useful dynamic range extends to 100mA as a switch and to 100MHz as an amplifier.  
Sourced from Proces 23.  
TO-92  
1. Emitter 2. Base 3. Collector  
1
Absolute Maximum Ratings TC=25°C unless otherwise noted  
Symbol Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
40  
V
VCEO  
VEBO  
IC  
30  
V
4
V
200  
mA  
°C  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 ~ 150  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1. These ratings are based on a maximum junction temperature of 150 degrees C.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Max.  
Units  
PD  
Total Device Dissipation  
Derate above 25°C  
625  
5.0  
mW  
mW/°C  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
83.3  
200  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.  
Electrical Characteristics TC=25°C unless otherwise noted  
Symbol  
BVCBO  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Test Condition  
IC = 10 μA  
Min. Typ. Max. Units  
40  
30  
4
V
V
V
BVCEO  
IC = 0.5 mA  
BVEBO  
IE = 10 μA  
VCB = 30 V, T = 25 °C  
T = 60 °C  
0.05  
1.0  
ICBO  
hFE  
Collector-Base Cut-off Current  
DC Current Gain  
μA  
VCE = 10V, IC = 2mA  
VCE = 10V, IC = 100mA  
90  
60  
180  
VCE(sat)  
Cob  
Collector-Emitter Saturation Voltage  
Output Capacitance  
IC = 50 mA, IB = 5 mA  
VCB = 5V, f = 1.0 MHz  
0.5  
3.5  
V
pF  
NOTES:  
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3. These ratings are based on a maximum junction temperature of 150degrees C.  
© 2007 Fairchild Semiconductor Corporation  
www.fairchildsemi.com  
MPS6513 Rev. 1.0.0  
1
12

中文翻译

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