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MPS651 PDF预览

MPS651

更新时间: 2024-11-18 10:48:51
品牌 Logo 应用领域
美微科 - MCC 晶体晶体管
页数 文件大小 规格书
3页 225K
描述
NPN Encapsulate Transistors

MPS651 数据手册

 浏览型号MPS651的Datasheet PDF文件第2页浏览型号MPS651的Datasheet PDF文件第3页 
M C C  
TM  
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MPS651  
Micro Commercial Components  
Features  
·
Switching and Amplifier Applications  
Epoxy meets UL 94 V-0 flammability rating  
NPN Encapsulate  
Transistors  
·
·
Moisure Sensitivity Level 1  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Marking Code:MPS651  
051  
Maximum Ratings  
TO-92  
Symbol  
Rating  
Rating  
Unit  
A
E
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current, Continuous  
Operating Junction Temperature  
Storage Temperature  
60  
80  
5.0  
V
V
V
2
A
TJ  
TSTG  
-55 to +150  
-55 to +150  
OC  
OC  
B
Thermal Characteristics  
Symbol  
Rating  
Total Device Dissipation  
Max  
625  
Unit  
mW  
PD  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
C
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
V(BR)CBO  
V(BR)EBO  
Collector-Emitter Breakdown Voltage*  
(I =10mAdc, I =0)  
Collector-Base Breakdown Voltage  
60  
80  
---  
---  
Vdc  
Vdc  
C
B
(I =100uAdc, IE=0)  
C
D
Emitter-Base Breakdown Voltage  
5.0  
---  
---  
---  
Vdc  
(I =10uAdc, IC=0)  
E
I
Collector Cutoff Current  
(VCB=80Vdc, IE=0)  
Base Cutoff Current  
(VEB=4Vdc, IC=0)  
100  
100  
nAdc  
nAdc  
CBO  
IEBO  
hFE  
E
B
DC Current Gain  
G
C
(VCE=2.0Vdc, IC=50mAdc)  
(VCE=2.0Vdc, IC=100mAdc)  
(VCE=2.0Vdc, IC=1Adc)  
(VCE=2.0Vdc, IC=2Adc)  
75  
75  
75  
40  
DIMENSIONS  
INCHES  
MM  
DIM  
A
B
C
D
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MAX  
.190  
MIN  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
VCE(sat)  
Collector-Emitter Saturation Voltage  
(IC=2Adc, IB=200mAdc)  
(IC=1Adc, IB=100mAdc)  
0.5  
0.3  
Vdc  
Vdc  
.190  
.590  
.020  
.160  
.104  
VBE(sat)  
VBE(on)  
fT  
Base-Emitter saturation Voltage  
(IC=1Adc, IB=100mA)  
E
G
1.2  
1.0  
Vdc  
Base-Emitter On Voltage  
(IC=1Adc, VCE=2.0Vdc)  
Vdc  
Transition frequency  
(IC=50mAdc, VCE=5Vdc,f=100MHz)  
75  
MHz  
www.mccsemi.com  
1 of 3  
Revision: A  
2011/01/01  

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