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MPS5172RLRMG PDF预览

MPS5172RLRMG

更新时间: 2024-11-21 05:50:03
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
6页 99K
描述
General Purpose Transistor NPN Silicon

MPS5172RLRMG 技术参数

是否无铅:不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.11
Is Samacsys:N最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:25 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

MPS5172RLRMG 数据手册

 浏览型号MPS5172RLRMG的Datasheet PDF文件第2页浏览型号MPS5172RLRMG的Datasheet PDF文件第3页浏览型号MPS5172RLRMG的Datasheet PDF文件第4页浏览型号MPS5172RLRMG的Datasheet PDF文件第5页浏览型号MPS5172RLRMG的Datasheet PDF文件第6页 
MPS5172  
General Purpose Transistor  
NPN Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
COLLECTOR  
3
MAXIMUM RATINGS  
2
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Symbol  
Value  
25  
Unit  
Vdc  
Vdc  
BASE  
V
CEO  
CBO  
V
25  
1
Emitter−Base Voltage  
V
EBO  
5.0  
Vdc  
EMITTER  
Collector Current − Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Power Dissipation @ T = 60°C  
P
P
450  
mW  
A
D
Total Device Dissipation @ T = 25°C  
1.5  
12  
W
mW/°C  
C
D
TO−92 (TO−226)  
CASE 29  
Derate above 25°C  
1
2
3
STYLE 1  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
q
83.3  
MPS  
5172  
AYWW G  
G
Maximum ratings are those values beyond which device damage can occur.  
Maximumratings applied to the device are individual stress limit values (not normal  
operating conditions) and are not valid simultaneously. If these limits are exceeded,  
device functional operation is not implied, damage may occur and reliability may  
be affected.  
MPS5172 = Device Code  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
MPS5172  
MPS5172G  
Package  
Shipping  
5000 / Bulk  
5000 / Bulk  
TO−92  
TO−92  
(Pb−Free)  
MPS5172RLRM  
TO−92  
2000/Ammo Pack  
2000/Ammo Pack  
MPS5172RLRMG  
TO−92  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
(Pb−Free)  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
December, 2005 − Rev. 2  
MPS5172/D  

MPS5172RLRMG 替代型号

型号 品牌 替代类型 描述 数据表
MPS5172RLRM ONSEMI

完全替代

General Purpose Transistor NPN Silicon
MPS5172 ONSEMI

完全替代

General Purpose Transistor NPN Silicon
MPS5172G ONSEMI

完全替代

General Purpose Transistor NPN Silicon

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