Datasheet > 晶体管 > 射频小信号双极晶体管> MPS3563RLRAG

MPS3563RLRAG

更新时间： 2024-11-26 04:14:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体放大器晶体管
页数	文件大小	规格书
3页	47K
描述
Amplifier Transistors NPN Silicon

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中文翻译

获取价格

数据手册
替代型号

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MPS3563RLRAG 数据手册

MPS918, MPS3563

MPS918 is a Preferred Device

Amplifier Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

BASE

Collector−Emitter Voltage

CEO

CBO

EBO

Vdc

MPS918

MPS3563

EMITTER

Collector−Base Voltage

Emitter−Base Voltage

Vdc

MPS918

MPS3563

MARKING

DIAGRAM

MPS918

MPS3563

3.0

2.0

Collector Current − Continuous

mAdc

MPS

xxxx

Total Device Dissipation @ T = 25°C

350

2.8

mW/°C

AYWW G

Derate above 25°C

TO−92

CASE 29−11

STYLE 1

Total Device Dissipation @ T = 25°C

0.85

6.8

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

MPSxxxx = Device Code

THERMAL CHARACTERISTICS

Characteristic

xxxx = 918 or 3563

= Assembly Location

Symbol

Max

Unit

= Year

= Work Week

= Pb−Free Package

Thermal Resistance, Junction−to−Ambient

(Note 1)

357

°C/W

Thermal Resistance, Junction−to−Case

147

°C/W

(Note: Microdot may be in either location)

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

†

Device

Package

Shipping

1. R

is measured with the device soldered into a typical printed circuit board.

MPS918

TO−92

5000 Units/Box

MPS918G

TO−92

(Pb−Free)

MPS3563

TO−92

5000 Units/Box

MPS3563G

TO−92

(Pb−Free)

MPS3563RLRA

TO−92

2000/Tape & Reel

MPS3563RLRAG

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 3

MPS918/D

12 3

中文翻译

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MPS3563RLRAG 替代型号

型号	品牌	替代类型	描述	数据表
BFS17	VISHAY	功能相似	Silicon NPN Planar RF Transistor

与MPS3563RLRAG相关器件

型号	品牌	获取价格	描述	数据表
MPS3563RLRB	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
MPS3563RLRE	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
MPS3563RLRF	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
MPS3563RLRM	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
MPS3563RLRP	MOTOROLA	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
MPS3563RLRP	ONSEMI	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92, TO-226AL, 3 PIN
MPS3563ZL1	MOTOROLA	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Sili
MPS3565	VISHAY	获取价格	Transistor,
MPS3565C	VISHAY	获取价格	Transistor,
MPS3566	ALLEGRO	获取价格	Transistor,

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