Datasheet > MPQ6519-AEC1

MPQ6519-AEC1

更新时间： 2024-04-09 19:01:53

品牌	Logo	应用领域
芯源 - MPS		调节器
页数	文件大小	规格书
20页	1731K
描述
3V 至 28V、5A、H 桥电流调节器，符合 AEC-Q100 认证

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数据手册

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MPQ6519-AEC1 数据手册

MPQ6519 – 3V TO 28V, 5A, H-BRIDGE CURRENT REGULATOR

PIN FUNCTIONS

Pin #

Name Description

2, 11

IFB

VIN

Current sense signal feedback. Connect IFB and ISEN together.

Input supply.

Negative switching node of H-bridge.

Bootstrap pin for LN high-side MOSFET gate driver. Connect a capacitor between

BSTN and LN.

BSTN

IC enable.

6, 7, 8

ISEN Current sense. Connect a current sensing resistor between ISEN and power ground.

Bootstrap pin for LP high-side MOSFET gate driver. Connect a capacitor between

BSTP and LP.

BSTP

Positive switching node of H-bridge.

Current polarity setting. Assuming the current direction flowing from LP to LN is positive,

MODE drive MODE high to run the current from LP to LN. Drive MODE low to run the current from

LN to LP.

Fault indication output.

is active low for fault conditions.

VCC 5V LDO output for internal driver and logic.

PWM signal input for current dimming. Apply a >20kHz PWM signal to PWM when

PWM

used.

FREQ Switching frequency setting. Connect a resistor from FREQ to GND.

ISET Full-scale current reference setting. Connect a resistor to GND from ISET.

COMP Loop compensation setting.

AGND Ground for internal logic.

Thermal Resistance ⁽⁴⁾

θ_JA

θ_JC

(1)

ABSOLUTE MAXIMUM RATINGS

QFN-19 (4mmx4mm)............. 44........ 9.... °C/W

Supply voltage (V_IN) .................................... 35V

V_LP, V_LN..................................-0.3V to V_IN+ 0.3V

V_BSTP.....................................................V_LP+ 6V

V_BSTN.....................................................V_LN+ 6V

All other pins...................................-0.3V to +6V

Continuous power dissipation (T_A= 25°C) ⁽²⁾

QFN-19 (4mmx4mm)................................. 2.8W

Junction temperature ................................150°C

Lead temperature .....................................260°C

Storage temperature............... -65°C to +150°C

Notes:

1) Exceeding these ratings may damage the device.

2) The maximum allowable power dissipation is a function of the

maximum junction temperature T_J(MAX), the junction-to-

ambient thermal resistance θ_JA, and the ambient temperature

T_A. The maximum allowable continuous power dissipation at

any ambient temperature is calculated by P_D(MAX) = (T_J

(MAX) - T_A) / θ_JA. Exceeding the maximum allowable power

dissipation produces an excessive die temperature, causing

the regulator to go into thermal shutdown. Internal thermal

shutdown circuitry protects the device from permanent

damage.

ESD Ratings

3) The device is not guaranteed to function outside of its

operation conditions.

4) Measured on JESD51-7, 4-layer board.

Human body model (HBM) .................... ±2000V

Charged device model (CDM) ............... ±1250V

Recommended Operating Conditions ⁽³⁾

Supply voltage (V_IN) ............................3V to 28V

Operating junction temp (T_J).... -40°C to +125°C

MPQ6519 Rev. 1.0

12/3/2020

www.MonolithicPower.com

MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.

1 2 345 6 7...20

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